Inventor
LUI KAM HONG
US16 patents
⚠️ This page may combine multiple inventors who share the name “LUI KAM HONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SILICONIX INC
10 patentsUS7183610B2Feb 27, 2007
Super trench MOSFET including buried source electrode and method of fabricating the same
SILICONIX INC118 citations98
US7557409B2Jul 7, 2009
Super trench MOSFET including buried source electrode
SILICONIX INC26 citations92
US6921697B2Jul 26, 2005
Method for making trench MIS device with reduced gate-to-drain capacitance
SILICONIX INC31 citations92
US6903412B2Jun 7, 2005
Trench MIS device with graduated gate oxide layer
SILICONIX INC21 citations92
US6882000B2Apr 19, 2005
Trench MIS device with reduced gate-to-drain capacitance
SILICONIX INC24 citations92
US6875657B2Apr 5, 2005
Method of fabricating trench MIS device with graduated gate oxide layer
SILICONIX INC17 citations92
US7012005B2Mar 14, 2006
Self-aligned differential oxidation in trenches by ion implantation
SILICONIX INC21 citations91
US6709930B2Mar 23, 2004
Thicker oxide formation at the trench bottom by selective oxide deposition
SILICONIX INC24 citations91
US6849898B2Feb 1, 2005
Trench MIS device with active trench corners and thick bottom oxide
SILICONIX INC11 citations73
US7704836B2Apr 27, 2010
Method of fabricating super trench MOSFET including buried source electrode
SILICONIX INC4 citations62
VISHAY SILICONIX
4 patentsUS6906380B1Jun 14, 2005
Drain side gate trench metal-oxide-semiconductor field effect transistor
VISHAY SILICONIX65 citations94
US7344945B1Mar 18, 2008
Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor
VISHAY SILICONIX27 citations91
US7494876B1Feb 24, 2009
Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the same
VISHAY SILICONIX20 citations86
US10032901B2Jul 24, 2018
Semiconductor device with trench-like feed-throughs
VISHAY SILICONIX0 citations51