Inventor
CHEN KUO-IN
US32 patents
⚠️ This page may combine multiple inventors who share the name “CHEN KUO-IN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SILICONIX INC
11 patentsUS5689128ANov 18, 1997
High density trenched DMOS transistor
SILICONIX INC242 citations99
US7183610B2Feb 27, 2007
Super trench MOSFET including buried source electrode and method of fabricating the same
SILICONIX INC118 citations98
US7557409B2Jul 7, 2009
Super trench MOSFET including buried source electrode
SILICONIX INC26 citations92
US6921697B2Jul 26, 2005
Method for making trench MIS device with reduced gate-to-drain capacitance
SILICONIX INC31 citations92
US6903412B2Jun 7, 2005
Trench MIS device with graduated gate oxide layer
SILICONIX INC21 citations92
US6882000B2Apr 19, 2005
Trench MIS device with reduced gate-to-drain capacitance
SILICONIX INC24 citations92
US6875657B2Apr 5, 2005
Method of fabricating trench MIS device with graduated gate oxide layer
SILICONIX INC17 citations92
US7012005B2Mar 14, 2006
Self-aligned differential oxidation in trenches by ion implantation
SILICONIX INC21 citations91
US6709930B2Mar 23, 2004
Thicker oxide formation at the trench bottom by selective oxide deposition
SILICONIX INC24 citations91
US6849898B2Feb 1, 2005
Trench MIS device with active trench corners and thick bottom oxide
SILICONIX INC11 citations73
US7704836B2Apr 27, 2010
Method of fabricating super trench MOSFET including buried source electrode
SILICONIX INC4 citations62
VISHAY SILICONIX
7 patentsUS8368126B2Feb 5, 2013
Trench metal oxide semiconductor with recessed trench material and remote contacts
VISHAY SILICONIX11 citations82
US9761696B2Sep 12, 2017
Self-aligned trench MOSFET and method of manufacture
VISHAY SILICONIX3 citations70
US8697571B2Apr 15, 2014
Power MOSFET contact metallization
VISHAY SILICONIX3 citations60
US9893168B2Feb 13, 2018
Split gate semiconductor device with curved gate oxide profile
VISHAY SILICONIX1 citations52
US10546750B2Jan 28, 2020
System and method for substrate wafer back side and edge cross section seals
VISHAY SILICONIX0 citations51
US10032901B2Jul 24, 2018
Semiconductor device with trench-like feed-throughs
VISHAY SILICONIX0 citations51
US8883580B2Nov 11, 2014
Trench metal oxide semiconductor with recessed trench material and remote contacts
VISHAY SILICONIX1 citations50
GAO YANG
3 patentsPATTANAYAK DEVA
3 patentsUS9437424B2Sep 6, 2016
High mobility power metal-oxide semiconductor field-effect transistors
PATTANAYAK DEVA10 citations82
US9425043B2Aug 23, 2016
High mobility power metal-oxide semiconductor field-effect transistors
PATTANAYAK DEVA2 citations61
US9306056B2Apr 5, 2016
Semiconductor device with trench-like feed-throughs
PATTANAYAK DEVA2 citations60