Inventor

VANSLETTE DANIEL S

US21 patents

⚠️ This page may combine multiple inventors who share the name “VANSLETTE DANIEL S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VANSLETTE DANIEL S

IBM

Through silicon via wafer, contacts and design structures

Simultaneously formed isolation trench and through-box contact for silicon-on-insulator technology

Method of forming a metal silicide transparent conductive electrode

Sputtered tungsten diffusion barrier for improved interconnect robustness

Method of forming refractory metal contact in an opening, and resulting structure

Method of forming a metal silicide transparent conductive electrode

Method of forming a metal silicide transparent conductive electrode

Electromigration resistant aluminum-based metal interconnect structure

Wafer frontside-backside through silicon via

Through silicon via wafer, contacts and design structures

Sputtered tungsten diffusion barrier for improved interconnect robustness

Method of forming refractory metal contact in an opening, and resulting structure

GAMBINO JEFFREY P

Structure with a metal silicide transparent conductive electrode and a method of forming the structure

Through silicon via wafer and methods of manufacturing

RASSEL ROBERT M

Integrated structures of high performance active devices and passive devices

Integrated structures of high performance active devices and passive devices

GLOBALFOUNDRIES INC

Method of eliminating poor reveal of through silicon vias

Integrated circuit and interconnect, and method of fabricating same

CAMILLO-CASTILLO RENATA A

Semiconductor device including in wafer inductors, related method and design structure

CHAPPLE-SOKOL JONATHAN D

Electromigration resistant aluminum-based metal interconnect structure

BONN JEFFREY P

Integrated circuit and design structure having reduced through silicon via-induced stress