P

Inventor

CHAO KUO-YI

TW59 patents

Patents

50 patents
US9647116B1May 9, 2017

Method for fabricating self-aligned contact in a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD19 citations93
US10923573B2Feb 16, 2021

Forming metal contacts on metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11189525B2Nov 30, 2021

Via-first process for connecting a contact and a gate electrode

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US12176435B2Dec 24, 2024

Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11532561B2Dec 20, 2022

Different via configurations for different via interface requirements

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11227950B2Jan 18, 2022

Methods of forming air spacers in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10535555B2Jan 14, 2020

Contact plugs and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10418453B2Sep 17, 2019

Forming metal contacts on metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269621B2Apr 23, 2019

Contact plugs and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10096525B2Oct 9, 2018

Method for fabricating self-aligned contact in a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11888049B2Jan 30, 2024

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11393724B2Jul 19, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11322394B2May 3, 2022

Contact formation method and related structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12057392B2Aug 6, 2024

Conductive features having varying resistance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11227830B2Jan 18, 2022

Conductive features having varying resistance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10950728B2Mar 16, 2021

Fin field effect transistor (FinFET) device structure with isolation layer and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12376277B2Jul 29, 2025

Compact electrical connection that can be used to form an SRAM cell and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11856745B2Dec 26, 2023

Compact electrical connection that can be used to form an SRAM cell and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11621267B2Apr 4, 2023

Compact electrical connection that can be used to form an SRAM cell and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11387240B2Jul 12, 2022

Compact electrical connection that can be used to form an SRAM cell and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12593670B2Mar 31, 2026

Contact formation method and related structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342598B2Jun 24, 2025

Forming metal contacts on metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12278188B2Apr 15, 2025

Different via configurations for different via interface requirements

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243940B2Mar 4, 2025

Methods of forming air spacers in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142565B2Nov 12, 2024

Different via configurations for different via interface requirements

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125743B2Oct 22, 2024

Via-first process for connecting a contact and a gate electrode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062692B2Aug 13, 2024

Tapered dielectric layer for preventing electrical shorting between gate and back side via

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11915971B2Feb 27, 2024

Contact formation method and related structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901426B2Feb 13, 2024

Forming metal contacts on metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855154B2Dec 26, 2023

Vertical interconnect features and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682729B2Jun 20, 2023

Methods of forming air spacers in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670544B2Jun 6, 2023

Via-first process for connecting a contact and a gate electrode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532717B2Dec 20, 2022

Forming metal contacts on metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508822B2Nov 22, 2022

Source/drain via having reduced resistance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11271112B2Mar 8, 2022

Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177212B2Nov 16, 2021

Contact formation method and related structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127684B2Sep 21, 2021

Low-resistance interconnect structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11107896B2Aug 31, 2021

Vertical interconnect features and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12506034B2Dec 23, 2025

Polishing interconnect structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12419102B2Sep 16, 2025

Semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12349381B2Jul 1, 2025

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12230712B2Feb 18, 2025

Dielectric fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12166076B2Dec 10, 2024

Semiconductor device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12068201B2Aug 20, 2024

Semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11978664B2May 7, 2024

Polishing interconnect structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11735665B2Aug 22, 2023

Dielectric fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11721590B2Aug 8, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11532733B1Dec 20, 2022

Dielectric isolation structure for multi-gate transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11430691B2Aug 30, 2022

Polishing interconnect structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11404576B2Aug 2, 2022

Dielectric fin structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

Showing the top 50 of 59 patents by PatentIndex Score.