Inventor

LIN RUEIJER

TW24 patents

⚠️ This page may combine multiple inventors who share the name “LIN RUEIJER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN RUEIJER

TAIWAN SEMICONDUCTOR MFG CO LTD

Method of forming an interconnect structure

Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the same

Method for forming fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact

Different via configurations for different via interface requirements

Method of forming an interconnect structure having a carbon-containing barrier layer

Different via configurations for different via interface requirements

Different via configurations for different via interface requirements

Interconnect structure having a carbon-containing barrier layer

Vertical interconnect features and methods of forming

Interconnect structure having a carbon-containing barrier layer

Method for forming fin field effect transistor (FINFET) device structure with conductive layer between gate and gate contact

Vertical interconnect features and methods of forming

Interconnect structure having a carbon-containing barrier layer

Pre-clean for contacts

Interconnect structure having a carbon-containing barrier layer

Fin field effect transistor (FinFET) device structure with conductive layer between gate and gate contact

Method for forming semiconductor device structure

Semiconductor device structure and method for forming the same

Method of forming self-alignment contact

Semiconductor device structure and method for forming the same

Semiconductor device structure and method for forming the same

Gate structure with insulating structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG

Stress-controlled formation of tin hard mask

Stress-controlled formation of TiN hard mask