Inventor

CHANG MENG-SHENG

TW164 patents

⚠️ This page may combine multiple inventors who share the name “CHANG MENG-SHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANG MENG-SHENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Memory devices and methods of manufacturing thereof

Non-volatile memory device with reduced area

One-time programmable memory bit cell

Multi-fuse memory cell circuit and method

Non-volatile memory device with reduced area

Memory devices and methods of manufacturing thereof

Reduced area efuse cell structure

Memory device and method of operating the same

Semiconductor memory devices with dielectric fin structures

Semiconductor memory devices with dielectric fin structures

Multiple stack high voltage circuit for memory

Semiconductor device having fuse array and method of making the same

Switches to reduce routing rails of memory system

Memory including metal rails with balanced loading

Memory system with physical unclonable function

Semiconductor memory devices with different doping types

Memory devices and methods of manufacturing thereof

Memory including metal rails with balanced loading

Multi-fuse memory cell circuit and method

Memory circuit and method of operating same

Switches to reduce routing rails of memory system

MIM efuse memory devices and fabrication method thereof

Bit selection for power reduction in stacking structure during memory programming

Memory devices and methods of manufacturing thereof

One-time-programmable memory device including an antifuse structure and methods of forming the same

Memory device, integrated circuit device and method

Memory device, integrated circuit device and method

Memory device

Multi-fuse memory cell circuit and method

Semiconductor device including anti-fuse cell structure

Layout structure of storage cell and method thereof

Integrated circuit layout, structure, system, and methods

EFuse

Layout structure of memory array

Memory devices, semiconductor devices, and methods of operating a memory device

One-time programmable memory bit cell

Semiconductor device having fuse array and method of making the same

Memory circuit including a first program device

Fusible structures and methods of manufacturing same

Reduced area eFuse cell structure

Voltage provision circuits with core transistors

Double metal layout for memory cells of a non-volatile memory

Capacitor and method for forming the same

Generation of physically unclonable function using one-time-programmable memory devices with back-end-of-line transistors

Memory device and operating method thereof

Semiconductor device and programmable macro circuit

Memory device with physical unclonable function and operating method thereof

One-time-programmable memory device including an antifuse structure and methods of forming the same

AU OPTRONICS CORP

Liquid crystal display having adaptive pulse shaping control mechanism

CHANG MENG-SHENG

Liquid crystal display having adaptive pulse shaping control mechanism