P

Inventor

WU I-WEN

TW50 patents
⚠️ This page may combine multiple inventors who share the name “WU I-WEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

47 patents
US12068200B2Aug 20, 2024

Backside via with a low-k spacer

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US11615987B2Mar 28, 2023

Backside via with a low-k spacer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US10943818B2Mar 9, 2021

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10930564B2Feb 23, 2021

Metal gate structure cutting process

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10504990B2Dec 10, 2019

Isolation features and methods of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10490459B2Nov 26, 2019

Method for source/drain contact formation in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US12464806B2Nov 4, 2025

Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US12068378B2Aug 20, 2024

Semiconductor devices with backside via and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11876135B2Jan 16, 2024

Epitaxial source/drain structures for multigate devices and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11791387B2Oct 17, 2023

Semiconductor devices with backside via and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11784222B2Oct 10, 2023

Epitaxial source/drain structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11728394B2Aug 15, 2023

Method of forming backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11302802B2Apr 12, 2022

Parasitic capacitance reduction

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9449886B2Sep 20, 2016

Semiconductor device and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11239309B2Feb 1, 2022

Isolation features and methods of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12550407B2Feb 10, 2026

Semiconductor devices with backside via and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12527071B2Jan 13, 2026

Metal gate structure cutting process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12507459B2Dec 23, 2025

Semiconductor device contact structures and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12334388B2Jun 17, 2025

Isolation structure and a self-aligned capping layer formed thereon

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12283630B2Apr 22, 2025

Epitaxial source/drain structures for multigate devices and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12266703B2Apr 1, 2025

Dielectric structures for semiconductor device structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12224324B2Feb 11, 2025

Method of forming backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11855161B2Dec 26, 2023

Semiconductor device contact structures and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11777004B2Oct 3, 2023

Fin field effect transistor (FinFET) device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11694931B2Jul 4, 2023

Metal gate structure cutting process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12464774B2Nov 4, 2025

Semiconductor structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125879B2Oct 22, 2024

Epitaxial source/drain structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119378B2Oct 15, 2024

Methods of forming epitaxial source/drain features in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068396B2Aug 20, 2024

Parasitic capacitance reduction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11968817B2Apr 23, 2024

Source/drain contact having a protruding segment

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11757022B2Sep 12, 2023

Parasitic capacitance reduction

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532507B2Dec 20, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264393B2Mar 1, 2022

Source/drain contact having a protruding segment

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222951B2Jan 11, 2022

Epitaxial source/drain structure and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217492B2Jan 4, 2022

Method for source/drain contact formation in semiconductor devices using common doping and common etching to n-type and p-type source/drains

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145554B2Oct 12, 2021

Method for source/drain contact formation in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11843028B2Dec 12, 2023

Isolation features and methods of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12439678B2Oct 7, 2025

Isolation structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12324202B2Jun 3, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12080769B2Sep 3, 2024

Contact structure with silicide and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10868118B2Dec 15, 2020

Methods of forming epitaxial source/drain features in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10790197B2Sep 29, 2020

Semiconductor arrangement and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510614B2Dec 17, 2019

Semiconductor arrangement and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276448B2Apr 30, 2019

Semiconductor arrangement and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10109530B2Oct 23, 2018

Semiconductor arrangement and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9754838B2Sep 5, 2017

Semiconductor arrangement and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9508844B2Nov 29, 2016

Semiconductor arrangement and formation thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

1 patent

PRIME OPTICAL FIBER CORP

1 patent

UNITED MICROELECTRONICS CORP

1 patent