Inventor
LEE CHEN-MING
TW107 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHEN-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
48 patentsUS10177038B1Jan 8, 2019
Prevention of contact bottom void in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US9647116B1May 9, 2017
Method for fabricating self-aligned contact in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD19 citations93
US9685439B1Jun 20, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations92
US12068200B2Aug 20, 2024
Backside via with a low-k spacer
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US11615987B2Mar 28, 2023
Backside via with a low-k spacer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11362003B2Jun 14, 2022
Prevention of contact bottom void in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10943818B2Mar 9, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10930564B2Feb 23, 2021
Metal gate structure cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10825737B2Nov 3, 2020
Prevention of contact bottom void in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10504990B2Dec 10, 2019
Isolation features and methods of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10490459B2Nov 26, 2019
Method for source/drain contact formation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10121675B2Nov 6, 2018
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9437495B2Sep 6, 2016
Mask-less dual silicide process
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US12464806B2Nov 4, 2025
Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US12068378B2Aug 20, 2024
Semiconductor devices with backside via and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11935932B2Mar 19, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11876135B2Jan 16, 2024
Epitaxial source/drain structures for multigate devices and methods of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11798996B2Oct 24, 2023
Backside contact with air spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11791387B2Oct 17, 2023
Semiconductor devices with backside via and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11784222B2Oct 10, 2023
Epitaxial source/drain structure and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11735474B2Aug 22, 2023
Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11728394B2Aug 15, 2023
Method of forming backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569364B2Jan 31, 2023
Silicide backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11532504B2Dec 20, 2022
Low-resistance contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11450572B2Sep 20, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11302802B2Apr 12, 2022
Parasitic capacitance reduction
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11227950B2Jan 18, 2022
Methods of forming air spacers in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11037924B2Jun 15, 2021
Method for forming source/drain contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10872781B2Dec 22, 2020
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867846B2Dec 15, 2020
Fin field effect transistor (finFET) device structure with protection layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797050B2Oct 6, 2020
Fin field effect transistor (finFET) device structure with capping layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10741438B2Aug 11, 2020
Low-resistance contact plugs and method forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10685880B2Jun 16, 2020
Methods for reducing contact depth variation in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10475788B2Nov 12, 2019
Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10096525B2Oct 9, 2018
Method for fabricating self-aligned contact in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855169B2Dec 26, 2023
Silicide structures in transistors and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11289383B2Mar 29, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9520327B2Dec 13, 2016
Methods of forming low resistance contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11387331B2Jul 12, 2022
Source/drain contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11749719B2Sep 5, 2023
Source/drain features
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US11398553B2Jul 26, 2022
Source/drain features
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US12550407B2Feb 10, 2026
Semiconductor devices with backside via and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12527071B2Jan 13, 2026
Metal gate structure cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12507459B2Dec 23, 2025
Semiconductor device contact structures and methods of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12414321B2Sep 9, 2025
Contact profile optimization for IC device performance improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12334388B2Jun 17, 2025
Isolation structure and a self-aligned capping layer formed thereon
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12317538B2May 27, 2025
Semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12300538B2May 13, 2025
Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
TAIWAN SEMICONDUCTOR MFG
1 patentLIN CHE HSIEN
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