Inventor

YANG FU-KAI

TW150 patents

⚠️ This page may combine multiple inventors who share the name “YANG FU-KAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG FU-KAI

TAIWAN SEMICONDUCTOR MFG CO LTD

Prevention of contact bottom void in semiconductor fabrication

Method for fabricating self-aligned contact in a semiconductor device

Semiconductor device and manufacturing method thereof

Backside via with a low-k spacer

Backside via with a low-k spacer

Prevention of contact bottom void in semiconductor fabrication

Dielectric spacer to prevent contacting shorting

Semiconductor device and method

Metal gate structure cutting process

Semiconductor device with funnel shape spacer and methods of forming the same

Prevention of contact bottom void in semiconductor fabrication

Isolation features and methods of fabricating the same

Method for source/drain contact formation in semiconductor devices

Semiconductor device and a method for fabricating the same

Mask-less dual silicide process

Semiconductor device with backside spacer and methods of forming the same

Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same

Semiconductor structure with conductive structure

Semiconductor devices with backside via and methods thereof

Semiconductor device and method

Epitaxial source/drain structures for multigate devices and methods of fabricating thereof

Semiconductor devices with backside via and methods thereof

Epitaxial source/drain structure and method

Fin field effect transistor (FinFET) device structure with protection layer and method for forming the same

Method of forming backside power rails

Silicide backside contact

Low-resistance contact plugs and method forming same

Semiconductor device and method

Dielectric spacer to prevent contacting shorting

Parasitic capacitance reduction

Method for forming source/drain contacts

Semiconductor device and a method for fabricating the same

Fin field effect transistor (finFET) device structure with protection layer and method for forming the same

Fin field effect transistor (finFET) device structure with capping layer and method for forming the same

Low-resistance contact plugs and method forming the same

Methods for reducing contact depth variation in semiconductor fabrication

Contact plugs and methods forming same

Fin field effect transistor (FinFET) device structure with capping layer and method for forming the same

Contact plugs and methods forming same

Method for forming self-aligned contact

Method for fabricating self-aligned contact in a semiconductor device

Silicide structures in transistors and methods of forming

Semiconductor structure with conductive structure and method for manufacturing the same

Semiconductor device and method

Semiconductor structure with mask structure

Mechanisms for semiconductor device structure

Source/drain contact structure

TAIWAN SEMICONDUCTOR MFG

Hard mask removal for semiconductor devices

Semiconductor device having a carbon containing insulation layer formed under the source/drain

GEOSAT AEROSPACE & TECH

Unmanned aerial vehicle