Inventor

WU JUI-JEN

TW71 patents

⚠️ This page may combine multiple inventors who share the name “WU JUI-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

15 patents

US7505319B2Mar 17, 2009

Method and apparatus for high efficiency redundancy scheme for multi-segment SRAM

TAIWAN SEMICONDUCTOR MFG13 citations84

US7466581B2Dec 16, 2008

SRAM design with separated VSS

TAIWAN SEMICONDUCTOR MFG11 citations84

US7319355B2Jan 15, 2008

Pulse generator

TAIWAN SEMICONDUCTOR MFG14 citations84

US7271644B2Sep 18, 2007

Multi-state electrical fuse

TAIWAN SEMICONDUCTOR MFG14 citations84

US7468903B2Dec 23, 2008

Circuits for improving read and write margins in multi-port SRAMS

TAIWAN SEMICONDUCTOR MFG18 citations83

US7019534B2Mar 28, 2006

Detecting the status of an electrical fuse

TAIWAN SEMICONDUCTOR MFG9 citations74

US9293179B2Mar 22, 2016

Multiple power domain circuit and related method

TAIWAN SEMICONDUCTOR MFG4 citations73

US8872570B2Oct 28, 2014

Multiple power domain circuit and related method

TAIWAN SEMICONDUCTOR MFG4 citations73

US9117500B2Aug 25, 2015

Memory write assist

TAIWAN SEMICONDUCTOR MFG4 citations72

US9183903B2Nov 10, 2015

Reading memory data

TAIWAN SEMICONDUCTOR MFG2 citations63

US8358165B2Jan 22, 2013

Ultra-low voltage level shifting circuit

TAIWAN SEMICONDUCTOR MFG3 citations63

US7362647B2Apr 22, 2008

Power control circuit

TAIWAN SEMICONDUCTOR MFG4 citations63

US7612605B2Nov 3, 2009

Bootstrap voltage generating circuits

TAIWAN SEMICONDUCTOR MFG3 citations62

US7577052B2Aug 18, 2009

Power switching circuit

TAIWAN SEMICONDUCTOR MFG6 citations61

US7535788B2May 19, 2009

Dynamic power control for expanding SRAM write margin

TAIWAN SEMICONDUCTOR MFG3 citations61

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents

US11942178B2Mar 26, 2024

Sense amplifier circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73

US11990194B2May 21, 2024

Shift register having low power mode

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US11349462B1May 31, 2022

Selector-based random number generator and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

US12554433B2Feb 17, 2026

Memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12362027B2Jul 15, 2025

Shift register having low power mode

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12354701B2Jul 8, 2025

Sense amplifier circuit and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12347474B2Jul 1, 2025

Memory devices, circuits and methods of adjusting a sensing current for the memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12334151B2Jun 17, 2025

Non-volatile memory stored with encoded data

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12283340B2Apr 22, 2025

Method for controlling sense amplifier and control device using the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12080346B2Sep 3, 2024

Memory device, integrated circuit device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US12057164B2Aug 6, 2024

Method of data encoding in non-volatile memories

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12057182B2Aug 6, 2024

Multi-level cell data encoding

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62

US11915733B2Feb 27, 2024

Memory devices, circuits and methods of adjusting a sensing current for the memory device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US11664790B2May 30, 2023

Selector-based random number generator and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

US12165733B2Dec 10, 2024

Sense amplifier, memory device and operation method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

WU JUI-JEN

6 patents

US8848419B2Sep 30, 2014

Sensing memory element logic states from bit line discharge rate that varies with resistance

WU JUI-JEN20 citations92

US8233330B2Jul 31, 2012

Sense amplifier used in the write operations of SRAM

WU JUI-JEN7 citations84

US8174867B2May 8, 2012

Negative-voltage generator with power tracking for improved SRAM write ability

WU JUI-JEN12 citations84

US8675418B2Mar 18, 2014

Memory write assist

WU JUI-JEN6 citations82

US8179735B2May 15, 2012

Using differential signals to read data on a single-end port

WU JUI-JEN5 citations62

US8111542B2Feb 7, 2012

8T low leakage SRAM cell

WU JUI-JEN3 citations62

JIANGSU ADVANCED MEMORY TECH CO LTD

6 patents

US10665296B1May 26, 2020

Memory driving device

JIANGSU ADVANCED MEMORY TECH CO LTD6 citations82

US10679681B1Jun 9, 2020

Sensing-amplifying device

JIANGSU ADVANCED MEMORY TECH CO LTD4 citations73

US9865347B2Jan 9, 2018

Memory driving circuit

JIANGSU ADVANCED MEMORY TECH CO LTD2 citations72

US11315632B2Apr 26, 2022

Memory drive device

JIANGSU ADVANCED MEMORY TECH CO LTD0 citations62

US11257542B2Feb 22, 2022

Memory driving device

JIANGSU ADVANCED MEMORY TECH CO LTD0 citations62

US10964383B2Mar 30, 2021

Memory driving device

JIANGSU ADVANCED MEMORY TECH CO LTD1 citations61

NINGBO ADVANCED MEMORY TECH CORP

2 patents

US9514817B1Dec 6, 2016

Non-volatile memory device with memristor

NINGBO ADVANCED MEMORY TECH CORP8 citations82

US9401203B1Jul 26, 2016

Memory driving circuit

NINGBO ADVANCED MEMORY TECH CORP6 citations71

NINGBO ADVANCED MEMORY TECHNOLOGY CORP

2 patents

US9362337B1Jun 7, 2016

Non-volatile storage unit and non-volatile storage device

NINGBO ADVANCED MEMORY TECHNOLOGY CORP13 citations77

US9368203B1Jun 14, 2016

Memory device and driving method thereof

NINGBO ADVANCED MEMORY TECHNOLOGY CORP2 citations60

CHOU SHAO-YU

1 patent

US8102199B2Jan 24, 2012

Ultra-low voltage level shifting circuit

CHOU SHAO-YU7 citations79

LIN YUNG-LUNG

1 patent

US8223575B2Jul 17, 2012

Multi-level electrical fuse using one programming device

LIN YUNG-LUNG7 citations78

CHEN YEN-HUEI

1 patent

US8144501B2Mar 27, 2012

Read/write margin improvement in SRAM design using dual-gate transistors

CHEN YEN-HUEI5 citations63

CHANG MENG-FAN

1 patent

US8462540B2Jun 11, 2013

Static random access memory cell

CHANG MENG-FAN2 citations61

Showing the top 50 of 71 patents by PatentIndex Score.