Inventor

ITO TOSHIYO

JP2 patents

Patents

2 patents

US4543707AOct 1, 1985

Method of forming through holes by differential etching of stacked silicon oxynitride layers

TOSHIBA KK116 citations93

US4766086AAug 23, 1988

Method of gettering a semiconductor device and forming an isolation region therein

TOSHIBA KK46 citations91