P

Inventor

PATEL SAHIL

US34 patents
⚠️ This page may combine multiple inventors who share the name “PATEL SAHIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

19 patents
US10797225B2Oct 6, 2020

Dual magnetic tunnel junction (DMTJ) stack design

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10648069B2May 12, 2020

Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10516100B2Dec 24, 2019

Silicon oxynitride based encapsulation layer for magnetic tunnel junctions

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10297746B2May 21, 2019

Post treatment to reduce shunting devices for physical etching process

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11696511B2Jul 4, 2023

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797232B2Oct 6, 2020

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10522745B2Dec 31, 2019

Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10522749B2Dec 31, 2019

Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12356865B2Jul 8, 2025

Multilayer structure for reducing film roughness in magnetic devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12185641B2Dec 31, 2024

Silicon oxynitride based encapsulation layer for magnetic tunnel junctions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12082509B2Sep 3, 2024

Dual magnetic tunnel junction (DMTJ) stack design

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11956971B2Apr 9, 2024

Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11903324B2Feb 13, 2024

Post treatment to reduce shunting devices for physical etching process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11597993B2Mar 7, 2023

Monolayer-by-monolayer growth of MgO layers using mg sublimation and oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424405B2Aug 23, 2022

Post treatment to reduce shunting devices for physical etching process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411174B2Aug 9, 2022

Silicon oxynitride based encapsulation layer for magnetic tunnel junctions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11316103B2Apr 26, 2022

Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11001919B2May 11, 2021

Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10700269B2Jun 30, 2020

Post treatment to reduce shunting devices for physical etching process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

HEADWAY TECH INC

8 patents

APPLIED MATERIALS INC

3 patents

ASTRAZENECA AB

2 patents

UNIV GEORGIA

1 patent

Iron Patents LLC

1 patent