Inventor
PATEL SAHIL
US34 patents
⚠️ This page may combine multiple inventors who share the name “PATEL SAHIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
19 patentsUS10797225B2Oct 6, 2020
Dual magnetic tunnel junction (DMTJ) stack design
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10648069B2May 12, 2020
Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10516100B2Dec 24, 2019
Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10297746B2May 21, 2019
Post treatment to reduce shunting devices for physical etching process
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11696511B2Jul 4, 2023
Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797232B2Oct 6, 2020
Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10522745B2Dec 31, 2019
Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10522749B2Dec 31, 2019
Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12356865B2Jul 8, 2025
Multilayer structure for reducing film roughness in magnetic devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12185641B2Dec 31, 2024
Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12082509B2Sep 3, 2024
Dual magnetic tunnel junction (DMTJ) stack design
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11956971B2Apr 9, 2024
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin-torque transfer-magnetic random access memory) devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11903324B2Feb 13, 2024
Post treatment to reduce shunting devices for physical etching process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11597993B2Mar 7, 2023
Monolayer-by-monolayer growth of MgO layers using mg sublimation and oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11424405B2Aug 23, 2022
Post treatment to reduce shunting devices for physical etching process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411174B2Aug 9, 2022
Silicon oxynitride based encapsulation layer for magnetic tunnel junctions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11316103B2Apr 26, 2022
Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11001919B2May 11, 2021
Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10700269B2Jun 30, 2020
Post treatment to reduce shunting devices for physical etching process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
HEADWAY TECH INC
8 patentsUS9935261B1Apr 3, 2018
Dielectric encapsulation layer for magnetic tunnel junction (MTJ) devices using radio frequency (RF) sputtering
HEADWAY TECH INC14 citations84
US11031548B2Jun 8, 2021
Reduce intermixing on MTJ sidewall by oxidation
HEADWAY TECH INC2 citations73
US10784310B2Sep 22, 2020
Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices
HEADWAY TECH INC2 citations73
US10115892B2Oct 30, 2018
Multilayer structure for reducing film roughness in magnetic devices
HEADWAY TECH INC2 citations73
US10038138B1Jul 31, 2018
High temperature volatilization of sidewall materials from patterned magnetic tunnel junctions
HEADWAY TECH INC2 citations73
US12310245B2May 20, 2025
Etching and encapsulation scheme for magnetic tunnel junction fabrication
HEADWAY TECH INC0 citations62
US11631802B2Apr 18, 2023
Etching and encapsulation scheme for magnetic tunnel junction fabrication
HEADWAY TECH INC0 citations62
US11289645B2Mar 29, 2022
Method to integrate MRAM devices to the interconnects of 30nm and beyond CMOS technologies
HEADWAY TECH INC1 citations62
APPLIED MATERIALS INC
3 patentsUS12201030B2Jan 14, 2025
Spin-orbit torque MRAM structure and manufacture thereof
APPLIED MATERIALS INC0 citations62
US11723283B2Aug 8, 2023
Spin-orbit torque MRAM structure and manufacture thereof
APPLIED MATERIALS INC0 citations62
US11522126B2Dec 6, 2022
Magnetic tunnel junctions with protection layers
APPLIED MATERIALS INC0 citations52