Inventor
CHO MIN-SOO
KR27 patents
⚠️ This page may combine multiple inventors who share the name “CHO MIN-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS6803276B2Oct 12, 2004
Semiconductor device having a flash memory cell and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD79 citations98
US6784476B2Aug 31, 2004
Semiconductor device having a flash memory cell and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD42 citations92
US6753571B2Jun 22, 2004
Nonvolatile memory cells having split gate structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD33 citations92
US6524915B2Feb 25, 2003
Split-gate flash memory and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD25 citations92
US5946528AAug 31, 1999
Liquid electrophotographic printer
SAMSUNG ELECTRONICS CO LTD20 citations92
US6724661B2Apr 20, 2004
Erasing method in non-volatile memory device
SAMSUNG ELECTRONICS CO LTD14 citations84
US6649471B2Nov 18, 2003
Method of planarizing non-volatile memory device
SAMSUNG ELECTRONICS CO LTD20 citations82
US6730565B2May 4, 2004
Method of forming flash memory
SAMSUNG ELECTRONICS CO LTD8 citations74
US6867082B2Mar 15, 2005
Nonvolatile memory cells having split gate structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6818509B2Nov 16, 2004
Methods of fabricating electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates
SAMSUNG ELECTRONICS CO LTD12 citations71
US6800525B2Oct 5, 2004
Method of manufacturing split gate flash memory device
SAMSUNG ELECTRONICS CO LTD10 citations71
US9705401B2Jul 11, 2017
Buck-boost converters and power management integrated circuits including the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US7183154B2Feb 27, 2007
Nonvolatile memory cells having split gate structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7180124B2Feb 20, 2007
Nonvolatile memory cells having split gate structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US6716699B2Apr 6, 2004
Method for manufacturing flash memory device
SAMSUNG ELECTRONICS CO LTD2 citations62
US6683340B2Jan 27, 2004
Split gate flash memory
SAMSUNG ELECTRONICS CO LTD5 citations62
US6483145B1Nov 19, 2002
Electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates
SAMSUNG ELECTRONICS CO LTD4 citations60
HUVITZ CO LTD
5 patentsUS12220168B2Feb 11, 2025
Chart projector for testing visual acuity
HUVITZ CO LTD1 citations62
US12196541B2Jan 14, 2025
Calibration method of optical coherence tomography device and camera
HUVITZ CO LTD0 citations47
US12062212B2Aug 13, 2024
Optical coherence tomography-based intraoral scanner calibration device and method for obtaining calibration information through full area scan
HUVITZ CO LTD0 citations47
US12262975B2Apr 1, 2025
Intraoral scanner having tomographic imaging function and method for tomographic imaging of oral cavity using the same
HUVITZ CO LTD0 citations46
US10918282B2Feb 16, 2021
Eye-examining apparatus in which visible-optical channel and infrared-optical channel are integrated
HUVITZ CO LTD0 citations46