P

Inventor

KIM DAI-GEUN

KR11 patents

Patents

11 patents
US6753571B2Jun 22, 2004

Nonvolatile memory cells having split gate structure and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD33 citations92
US6867082B2Mar 15, 2005

Nonvolatile memory cells having split gate structure and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations73
US6800525B2Oct 5, 2004

Method of manufacturing split gate flash memory device

SAMSUNG ELECTRONICS CO LTD10 citations71
US7183154B2Feb 27, 2007

Nonvolatile memory cells having split gate structure and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US7180124B2Feb 20, 2007

Nonvolatile memory cells having split gate structure and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US6716699B2Apr 6, 2004

Method for manufacturing flash memory device

SAMSUNG ELECTRONICS CO LTD2 citations62
US7564092B2Jul 21, 2009

Flash memory device having a split gate

SAMSUNG ELECTRONICS CO LTD0 citations51
US7195933B2Mar 27, 2007

Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern

SAMSUNG ELECTRONICS CO LTD0 citations51
US7094646B2Aug 22, 2006

Flash memory device having a split gate and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US6924505B2Aug 2, 2005

Semiconductor device having a measuring pattern and a method of measuring the semiconductor device using the measuring pattern

SAMSUNG ELECTRONICS CO LTD0 citations51
US7942506B2May 17, 2011

Inkjet printer head and method to manufacture the same

SAMSUNG ELECTRONICS CO LTD0 citations47