Inventor
NAMIZAKI HIROFUMI
13 patents
Patents
13 patentsUS3990096ANov 2, 1976
Semiconductor luminescent device
MITSUBISHI ELECTRIC CORP28 citations81
US4929571AMay 29, 1990
Method of making a buried crescent laser with air gap insulator
MITSUBISHI ELECTRIC CORP9 citations73
US4277759AJul 7, 1981
Semiconductor laser device
MITSUBISHI ELECTRIC CORP7 citations73
US4183038AJan 8, 1980
Semiconductor laser device
MITSUBISHI ELECTRIC CORP16 citations73
US3961996AJun 8, 1976
Process of producing semiconductor laser device
MITSUBISHI ELECTRIC CORP16 citations73
US4758535AJul 19, 1988
Method for producing semiconductor laser
MITSUBISHI ELECTRIC CORP9 citations72
US4166278AAug 28, 1979
Semiconductor injection laser device
MITSUBISHI ELECTRIC CORP9 citations72
US4847845AJul 11, 1989
Semiconductor laser with an interposed gap
MITSUBISHI ELECTRIC CORP4 citations62
US4809289AFeb 28, 1989
Semiconductor laser device
MITSUBISHI ELECTRIC CORP2 citations62
US4728625AMar 1, 1988
Method of fabricating buried crescent semiconductor laser device by removing a surface portion of substrate around a groove therein
MITSUBISHI ELECTRIC CORP5 citations60
US4561096ADec 24, 1985
Buried semiconductor laser avoiding thyristor action
MITSUBISHI ELECTRIC CORP3 citations60
US4723251AFeb 2, 1988
Semiconductor laser having an active layer buried in a groove
MITSUBISHI ELECTRIC CORP6 citations59
US4504328AMar 12, 1985
Liquid phase epitaxial growth technique
MITSUBISHI ELECTRIC CORP0 citations41