Inventor
OHKOSHI TOKIO
JP3 patents
Patents
3 patentsUS4540673ASep 10, 1985
Sintered aluminum nitride and semi-conductor device using the same
HITACHI LTD50 citations95
US4585706AApr 29, 1986
Sintered aluminum nitride semi-conductor device
HITACHI LTD22 citations81
US4571610AFeb 18, 1986
Semiconductor device having electrically insulating substrate of SiC
HITACHI LTD11 citations72