Inventor
IWATA HIROKAZU
JP51 patents
⚠️ This page may combine multiple inventors who share the name “IWATA HIROKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RICOH KK
13 patentsUS6592663B1Jul 15, 2003
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH KK167 citations99
US5684523ANov 4, 1997
Optical line printhead and an LED chip used therefor
RICOH KK145 citations96
US5665985ASep 9, 1997
Light-emitting diode of edge-emitting type, light-receiving device of lateral-surface-receiving type, and arrayed light source
RICOH KK54 citations96
US7261775B2Aug 28, 2007
Methods of growing a group III nitride crystal
RICOH KK22 citations92
US7250640B2Jul 31, 2007
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH KK14 citations92
US7220311B2May 22, 2007
Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
RICOH KK28 citations92
US7001457B2Feb 21, 2006
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK31 citations92
US6949140B2Sep 27, 2005
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK49 citations92
US7531038B2May 12, 2009
Crystal growth method
RICOH KK9 citations84
US7508003B2Mar 24, 2009
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
RICOH KK8 citations84
US7462238B2Dec 9, 2008
Crystal growth apparatus and method of producing a crystal
RICOH KK14 citations83
US7828896B2Nov 9, 2010
Methods of growing a group III nitride crystal
RICOH KK4 citations63
US7718002B2May 18, 2010
Crystal manufacturing apparatus
RICOH KK4 citations63
NIHON DEMPA KOGYO CO
10 patentsUS10819307B2Oct 27, 2020
Crystal unit and manufacturing method thereof
NIHON DEMPA KOGYO CO7 citations84
US10529910B2Jan 7, 2020
Piezoelectric device
NIHON DEMPA KOGYO CO3 citations73
US10659005B2May 19, 2020
At-cut crystal element, crystal resonator and crystal unit
NIHON DEMPA KOGYO CO4 citations72
US10333489B2Jun 25, 2019
Crystal unit
NIHON DEMPA KOGYO CO2 citations72
US10263597B2Apr 16, 2019
Crystal unit
NIHON DEMPA KOGYO CO4 citations72
US10250225B2Apr 2, 2019
AT-cut crystal element, crystal resonator and crystal unit
NIHON DEMPA KOGYO CO2 citations71
US11296275B2Apr 5, 2022
Piezoelectric device, piezoelectric vibrating piece, and method for manufacturing piezoelectric vibrating piece
NIHON DEMPA KOGYO CO0 citations63
US11824516B2Nov 21, 2023
Piezoelectric device and manufacturing method of the same
NIHON DEMPA KOGYO CO0 citations48
US10840882B2Nov 17, 2020
Crystal unit and manufacturing method thereof
NIHON DEMPA KOGYO CO0 citations38
US10771038B2Sep 8, 2020
Crystal unit
NIHON DEMPA KOGYO CO0 citations37
SARAYAMA SEIJI
9 patentsUS8337798B2Dec 25, 2012
Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
SARAYAMA SEIJI15 citations83
US8623138B2Jan 7, 2014
Crystal growth apparatus
SARAYAMA SEIJI2 citations62
US8591647B2Nov 26, 2013
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
SARAYAMA SEIJI1 citations62
US8101020B2Jan 24, 2012
Crystal growth apparatus and manufacturing method of group III nitride crystal
SARAYAMA SEIJI4 citations62
US9856575B2Jan 2, 2018
Crystal growth apparatus and manufacturing method of group III nitride crystal
SARAYAMA SEIJI0 citations51
US9222199B2Dec 29, 2015
Crystal manufacturing apparatus
SARAYAMA SEIJI0 citations51
US9163325B2Oct 20, 2015
Crystal growth apparatus and manufacturing method of group III nitride crystal
SARAYAMA SEIJI0 citations51
US8829530B2Sep 9, 2014
Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
SARAYAMA SEIJI0 citations51
US8888912B2Nov 18, 2014
Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal
SARAYAMA SEIJI0 citations41
IWATA HIROKAZU
7 patentsUS8337617B2Dec 25, 2012
Manufacturing method and manufacturing apparatus of a group III nitride crystal
IWATA HIROKAZU2 citations62
US9464367B2Oct 11, 2016
Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
IWATA HIROKAZU1 citations51
US9376763B2Jun 28, 2016
Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen
IWATA HIROKAZU0 citations51
US9365948B2Jun 14, 2016
Group III nitride crystal and manufacturing method thereof
IWATA HIROKAZU0 citations51
US8858908B2Oct 14, 2014
Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
IWATA HIROKAZU0 citations51
US8475593B2Jul 2, 2013
Crystal preparing device, crystal preparing method, and crystal
IWATA HIROKAZU1 citations51
US8323404B2Dec 4, 2012
Group III nitride crystal and manufacturing method thereof
IWATA HIROKAZU0 citations51
TOYO COMMUNICATION EQUIP
5 patentsUS7235913B2Jun 26, 2007
Piezoelectric substrate, piezoelectric resonating element and surface-mount piezoelectric oscillator
TOYO COMMUNICATION EQUIP15 citations92
US7098574B2Aug 29, 2006
Piezoelectric resonator and method for manufacturing the same
TOYO COMMUNICATION EQUIP35 citations92
US6750593B2Jun 15, 2004
High frequency piezoelectric resonator having reduced spurious modes
TOYO COMMUNICATION EQUIP43 citations92
US7012353B2Mar 14, 2006
Piezoelectric resonator and the method for making the same
TOYO COMMUNICATION EQUIP3 citations63
US7038359B2May 2, 2006
Piezoelectric resonator and the method for making the same
TOYO COMMUNICATION EQUIP0 citations52
RICOH CO LTD
3 patentsUS7981213B2Jul 19, 2011
Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
RICOH CO LTD2 citations63
US11245249B2Feb 8, 2022
Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laser
RICOH CO LTD0 citations62
US9869033B2Jan 16, 2018
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH CO LTD0 citations52
BROTHER IND LTD
1 patentMIYADERA TATSUYA
1 patentSATOH TAKASHI
1 patentShowing the top 50 of 51 patents by PatentIndex Score.