Inventor
SARAYAMA SEIJI
JP38 patents
⚠️ This page may combine multiple inventors who share the name “SARAYAMA SEIJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RICOH KK
12 patentsUS6592663B1Jul 15, 2003
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH KK167 citations99
US7261775B2Aug 28, 2007
Methods of growing a group III nitride crystal
RICOH KK22 citations92
US7250640B2Jul 31, 2007
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH KK14 citations92
US7220311B2May 22, 2007
Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
RICOH KK28 citations92
US7001457B2Feb 21, 2006
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK31 citations92
US6949140B2Sep 27, 2005
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK49 citations92
US6780239B2Aug 24, 2004
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
RICOH KK40 citations92
US7531038B2May 12, 2009
Crystal growth method
RICOH KK9 citations84
US7508003B2Mar 24, 2009
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
RICOH KK8 citations84
US7462238B2Dec 9, 2008
Crystal growth apparatus and method of producing a crystal
RICOH KK14 citations83
US7828896B2Nov 9, 2010
Methods of growing a group III nitride crystal
RICOH KK4 citations63
US7718002B2May 18, 2010
Crystal manufacturing apparatus
RICOH KK4 citations63
SARAYAMA SEIJI
11 patentsUS8337798B2Dec 25, 2012
Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
SARAYAMA SEIJI15 citations83
US8623138B2Jan 7, 2014
Crystal growth apparatus
SARAYAMA SEIJI2 citations62
US8591647B2Nov 26, 2013
Production of a GaN bulk crystal substrate and a semiconductor device formed thereon
SARAYAMA SEIJI1 citations62
US8101020B2Jan 24, 2012
Crystal growth apparatus and manufacturing method of group III nitride crystal
SARAYAMA SEIJI4 citations62
US9856575B2Jan 2, 2018
Crystal growth apparatus and manufacturing method of group III nitride crystal
SARAYAMA SEIJI0 citations51
US9222199B2Dec 29, 2015
Crystal manufacturing apparatus
SARAYAMA SEIJI0 citations51
US9163325B2Oct 20, 2015
Crystal growth apparatus and manufacturing method of group III nitride crystal
SARAYAMA SEIJI0 citations51
US8829530B2Sep 9, 2014
Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
SARAYAMA SEIJI0 citations51
US8562737B2Oct 22, 2013
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device
SARAYAMA SEIJI0 citations51
US8129082B2Mar 6, 2012
Electrophotographic photoreceptor, image forming method using electrophotographic photoreceptor, image forming apparatus, and process cartridge for image forming apparatus
SARAYAMA SEIJI1 citations51
US8888912B2Nov 18, 2014
Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal
SARAYAMA SEIJI0 citations41
IWATA HIROKAZU
5 patentsUS8337617B2Dec 25, 2012
Manufacturing method and manufacturing apparatus of a group III nitride crystal
IWATA HIROKAZU2 citations62
US9376763B2Jun 28, 2016
Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen
IWATA HIROKAZU0 citations51
US9365948B2Jun 14, 2016
Group III nitride crystal and manufacturing method thereof
IWATA HIROKAZU0 citations51
US8475593B2Jul 2, 2013
Crystal preparing device, crystal preparing method, and crystal
IWATA HIROKAZU1 citations51
US8323404B2Dec 4, 2012
Group III nitride crystal and manufacturing method thereof
IWATA HIROKAZU0 citations51
HAYASHI MASAHIRO
4 patentsUS9732435B2Aug 15, 2017
Group 13 nitride crystal and group 13 nitride crystal substrate
HAYASHI MASAHIRO2 citations70
US9863058B2Jan 9, 2018
Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing method
HAYASHI MASAHIRO0 citations49
US9404196B2Aug 2, 2016
Manufacturing method of group 13 nitride crystal
HAYASHI MASAHIRO0 citations49
US9123863B2Sep 1, 2015
Group 13 nitride crystal and substrate thereof
HAYASHI MASAHIRO0 citations39
RICOH CO LTD
2 patentsUS7981213B2Jul 19, 2011
Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
RICOH CO LTD2 citations63
US9869033B2Jan 16, 2018
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
RICOH CO LTD0 citations52