P

Inventor

TAKASAKI KANETAKE

JP20 patents

Patents

20 patents
US4539068ASep 3, 1985

Vapor phase growth method

FUJITSU LTD147 citations98
US5424243AJun 13, 1995

Method of making a compound semiconductor crystal-on-substrate structure

FUJITSU LTD58 citations96
US4581622AApr 8, 1986

UV erasable EPROM with UV transparent silicon oxynitride coating

FUJITSU LTD50 citations96
US4394401AJul 19, 1983

Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film

FUJITSU LTD77 citations96
US5312783AMay 17, 1994

Process for the preparation of a high dielectric thin film using ECR plasma CVD

FUJITSU LTD48 citations92
US5210052AMay 11, 1993

Method for fabricating a semiconductor substrate

FUJITSU LTD33 citations92
US5107317AApr 21, 1992

Semiconductor device with first and second buffer layers

FUJITSU LTD33 citations92
US4532022AJul 30, 1985

Process of producing a semiconductor device

FUJITSU LTD41 citations92
US4384933AMay 24, 1983

Method of reactive sputtering

FUJITSU LTD28 citations92
US4363868ADec 14, 1982

Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process

FUJITSU LTD32 citations92
US6468926B1Oct 22, 2002

Manufacture method and system for semiconductor device with thin gate insulating film of oxynitride

FUJITSU LTD22 citations91
US4929985AMay 29, 1990

Compound semiconductor device

FUJITSU LTD21 citations82
US5019529AMay 28, 1991

Heteroepitaxial growth method

FUJITSU LTD16 citations74
US4741919AMay 3, 1988

Process for preparation of semiconductor device

FUJITSU LTD6 citations74
US4406053ASep 27, 1983

Process for manufacturing a semiconductor device having a non-porous passivation layer

FUJITSU LTD13 citations74
US5057880AOct 15, 1991

Semiconductor device having a heteroepitaxial substrate

FUJITSU LTD12 citations73
US6984267B2Jan 10, 2006

Manufacture system for semiconductor device with thin gate insulating film

FUJITSU LTD8 citations72
US4781945ANov 1, 1988

Process for the formation of phosphosilicate glass coating

FUJITSU LTD14 citations70
US5183778AFeb 2, 1993

Method of producing a semiconductor device

FUJITSU LTD4 citations63
US6780699B2Aug 24, 2004

Semiconductor device and method for fabricating the same

FUJITSU LTD5 citations61