Inventor
IWASA NARUHITO
JP27 patents
⚠️ This page may combine multiple inventors who share the name “IWASA NARUHITO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NICHIA KAGAKU KOGYO KK
16 patentsUS6756611B2Jun 29, 2004
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
NICHIA KAGAKU KOGYO KK87 citations99
US6153010ANov 28, 2000
Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
NICHIA KAGAKU KOGYO KK872 citations99
US5959307ASep 28, 1999
Nitride semiconductor device
NICHIA KAGAKU KOGYO KK319 citations99
US5777350AJul 7, 1998
Nitride semiconductor light-emitting device
NICHIA KAGAKU KOGYO KK474 citations99
US5747832AMay 5, 1998
Light-emitting gallium nitride-based compound semiconductor device
NICHIA KAGAKU KOGYO KK173 citations99
US5734182AMar 31, 1998
Light-emitting gallium nitride-based compound semiconducor device
NICHIA KAGAKU KOGYO KK115 citations99
US5578839ANov 26, 1996
Light-emitting gallium nitride-based compound semiconductor device
NICHIA KAGAKU KOGYO KK429 citations99
US5468678ANov 21, 1995
Method of manufacturing P-type compound semiconductor
NICHIA KAGAKU KOGYO KK132 citations99
US5306662AApr 26, 1994
Method of manufacturing P-type compound semiconductor
NICHIA KAGAKU KOGYO KK304 citations99
US6215133B1Apr 10, 2001
Light-emitting gallium nitride-based compound semiconductor device
NICHIA KAGAKU KOGYO KK73 citations97
US5880486AMar 9, 1999
Light-emitting gallium nitride-based compound semiconductor device
NICHIA KAGAKU KOGYO KK80 citations97
US6580099B2Jun 17, 2003
Nitride semiconductor light-emitting devices
NICHIA KAGAKU KOGYO KK52 citations96
US6078063AJun 20, 2000
Light-emitting gallium nitride-based compound semiconductor device
NICHIA KAGAKU KOGYO KK37 citations96
US6469323B1Oct 22, 2002
Light-emitting gallium nitride-based compound semiconductor device
NICHIA KAGAKU KOGYO KK15 citations93
US6940103B2Sep 6, 2005
Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device
NICHIA KAGAKU KOGYO KK19 citations92
US7154128B2Dec 26, 2006
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
NICHIA KAGAKU KOGYO KK10 citations82
NICHIA CORP
7 patentsUS7442254B2Oct 28, 2008
Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer
NICHIA CORP26 citations96
US6791103B2Sep 14, 2004
Light-emitting gallium nitride-based compound semiconductor device
NICHIA CORP45 citations96
US7166869B2Jan 23, 2007
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
NICHIA CORP14 citations92
US7083679B2Aug 1, 2006
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
NICHIA CORP17 citations92
US6900465B2May 31, 2005
Nitride semiconductor light-emitting device
NICHIA CORP31 citations92
USRE42770EOct 4, 2011
Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer
NICHIA CORP6 citations74
US7166874B2Jan 23, 2007
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
NICHIA CORP6 citations74