Inventor
YU CHIENFAN
US27 patents
Patents
27 patentsUS5282925AFeb 1, 1994
Device and method for accurate etching and removal of thin film
IBM200 citations99
US6864041B2Mar 8, 2005
Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
IBM538 citations98
US5838055ANov 17, 1998
Trench sidewall patterned by vapor phase etching
IBM135 citations98
US6074951AJun 13, 2000
Vapor phase etching of oxide masked by resist or masking material
IBM66 citations96
US6071815AJun 6, 2000
Method of patterning sidewalls of a trench in integrated circuit manufacturing
IBM63 citations96
US5876879AMar 2, 1999
Oxide layer patterned by vapor phase etching
IBM61 citations96
US5766971AJun 16, 1998
Oxide strip that improves planarity
IBM67 citations96
US5636320AJun 3, 1997
Sealed chamber with heating lamps provided within transparent tubes
IBM48 citations93
US6541320B2Apr 1, 2003
Method to controllably form notched polysilicon gate structures
IBM32 citations92
US5423940AJun 13, 1995
Supersonic molecular beam etching of surfaces
IBM22 citations92
US5286331AFeb 15, 1994
Supersonic molecular beam etching of surfaces
IBM31 citations92
US6884734B2Apr 26, 2005
Vapor phase etch trim structure with top etch blocking layer
IBM38 citations91
US5792275AAug 11, 1998
Film removal by chemical transformation and aerosol clean
IBM29 citations91
US6509219B2Jan 21, 2003
Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch
IBM17 citations83
US6518151B1Feb 11, 2003
Dual layer hard mask for eDRAM gate etch process
IBM14 citations82
US6429067B1Aug 6, 2002
Dual mask process for semiconductor devices
IBM15 citations81
US6228769B1May 8, 2001
Endpoint detection by chemical reaction and photoionization
IBM8 citations73
US6180422B1Jan 30, 2001
Endpoint detection by chemical reaction
IBM5 citations73
US6066564AMay 23, 2000
Indirect endpoint detection by chemical reaction
IBM12 citations73
US6960523B2Nov 1, 2005
Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device
IBM10 citations71
US6617085B1Sep 9, 2003
Wet etch reduction of gate widths
IBM11 citations69
US6294102B1Sep 25, 2001
Selective dry etch of a dielectric film
IBM10 citations69
US6656375B1Dec 2, 2003
Selective nitride: oxide anisotropic etch process
IBM3 citations62
US6419785B1Jul 16, 2002
Endpoint detection by chemical reaction
IBM2 citations62
US6054328AApr 25, 2000
Method for cleaning the surface of a dielectric
IBM3 citations62
US6890815B2May 10, 2005
Reduced cap layer erosion for borderless contacts
IBM5 citations61
US9059194B2Jun 16, 2015
High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension control
IBM0 citations35