Inventor
SINGH RANBIR
US96 patents
⚠️ This page may combine multiple inventors who share the name “SINGH RANBIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AGERE SYSTEMS INC
10 patentsUS6512700B1Jan 28, 2003
Non-volatile memory cell having channel initiated secondary electron injection programming mechanism
AGERE SYSTEMS INC73 citations96
US7002829B2Feb 21, 2006
Apparatus and method for programming a one-time programmable memory device
AGERE SYSTEMS INC24 citations92
US6573149B2Jun 3, 2003
Semiconductor device having a metal gate with a work function compatible with a semiconductor device
AGERE SYSTEMS INC22 citations91
US7141486B1Nov 28, 2006
Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures
AGERE SYSTEMS INC15 citations84
US7982286B2Jul 19, 2011
Method to improve metal defects in semiconductor device fabrication
AGERE SYSTEMS INC11 citations83
US7764541B2Jul 27, 2010
Method and apparatus for hot carrier programmed one time programmable (OTP) memory
AGERE SYSTEMS INC8 citations83
US7557010B2Jul 7, 2009
Method to improve writer leakage in a SiGe bipolar device
AGERE SYSTEMS INC13 citations82
US7279393B2Oct 9, 2007
Trench isolation structure and method of manufacture therefor
AGERE SYSTEMS INC12 citations82
US7923340B2Apr 12, 2011
Method to reduce collector resistance of a bipolar transistor and integration into a standard CMOS flow
AGERE SYSTEMS INC7 citations81
US6844236B2Jan 18, 2005
Method and structure for DC and RF shielding of integrated circuits
AGERE SYSTEMS INC12 citations81
CREE INC
9 patentsUS6956238B2Oct 18, 2005
Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
CREE INC90 citations98
US6673662B2Jan 6, 2004
Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
CREE INC77 citations98
US6653659B2Nov 25, 2003
Silicon carbide inversion channel mosfets
CREE INC78 citations97
US6429041B1Aug 6, 2002
Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation
CREE INC81 citations97
US6573128B1Jun 3, 2003
Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
CREE INC49 citations96
US6329675B2Dec 11, 2001
Self-aligned bipolar junction silicon carbide transistors
CREE INC55 citations96
US6100169AAug 8, 2000
Methods of fabricating silicon carbide power devices by controlled annealing
CREE INC82 citations96
US6849874B2Feb 1, 2005
Minimizing degradation of SiC bipolar semiconductor devices
CREE INC30 citations92
US6303475B1Oct 16, 2001
Methods of fabricating silicon carbide power devices by controlled annealing
CREE INC26 citations92
LUCENT TECHNOLOGIES INC
9 patentsUS6191980B1Feb 20, 2001
Single-poly non-volatile memory cell having low-capacitance erase gate
LUCENT TECHNOLOGIES INC76 citations95
US5654581AAug 5, 1997
Integrated circuit capacitor
LUCENT TECHNOLOGIES INC38 citations95
US5576240ANov 19, 1996
Method for making a metal to metal capacitor
LUCENT TECHNOLOGIES INC69 citations95
US6168995B1Jan 2, 2001
Method of fabricating a split gate memory cell
LUCENT TECHNOLOGIES INC27 citations92
US6395610B1May 28, 2002
Method of making bipolar transistor semiconductor device including graded, grown, high quality oxide layer
LUCENT TECHNOLOGIES INC27 citations90
US5851870ADec 22, 1998
Method for making a capacitor
LUCENT TECHNOLOGIES INC31 citations89
US5721445AFeb 24, 1998
Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity
LUCENT TECHNOLOGIES INC48 citations87
US6528845B1Mar 4, 2003
Non-volatile semiconductor memory cell utilizing trapped charge generated by channel-initiated secondary electron injection
LUCENT TECHNOLOGIES INC16 citations83
US6174786B1Jan 16, 2001
Shallow trench isolation method providing rounded top trench corners
LUCENT TECHNOLOGIES INC18 citations81
CREE RESEARCH INC
8 patentsUS5831288ANov 3, 1998
Silicon carbide metal-insulator semiconductor field effect transistor
CREE RESEARCH INC123 citations99
US5719409AFeb 17, 1998
Silicon carbide metal-insulator semiconductor field effect transistor
CREE RESEARCH INC291 citations99
US6121633ASep 19, 2000
Latch-up free power MOS-bipolar transistor
CREE RESEARCH INC100 citations98
US6107142AAug 22, 2000
Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion
CREE RESEARCH INC109 citations98
US5969378AOct 19, 1999
Latch-up free power UMOS-bipolar transistor
CREE RESEARCH INC93 citations98
US6218254B1Apr 17, 2001
Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices
CREE RESEARCH INC76 citations96
US6281521B1Aug 28, 2001
Silicon carbide horizontal channel buffered gate semiconductor devices
CREE RESEARCH INC46 citations93
US6011279AJan 4, 2000
Silicon carbide field controlled bipolar switch
CREE RESEARCH INC18 citations84
AGERE SYST GUARDIAN CORP
5 patentsUS6383879B1May 7, 2002
Semiconductor device having a metal gate with a work function compatible with a semiconductor device
AGERE SYST GUARDIAN CORP120 citations97
US6324095B1Nov 27, 2001
Low voltage flash EEPROM memory cell with improved data retention
AGERE SYST GUARDIAN CORP20 citations93
US6459615B1Oct 1, 2002
Non-volatile memory cell array with shared erase device
AGERE SYST GUARDIAN CORP22 citations92
US6313500B1Nov 6, 2001
Split gate memory cell
AGERE SYST GUARDIAN CORP21 citations92
US6222764B1Apr 24, 2001
Erasable memory device and an associated method for erasing a memory cell therein
AGERE SYST GUARDIAN CORP42 citations92
GENESIC SEMICONDUCTOR INC
4 patentsUS11183566B1Nov 23, 2021
Performance silicon carbide power devices
GENESIC SEMICONDUCTOR INC11 citations85
US11004940B1May 11, 2021
Manufacture of power devices having increased cross over current
GENESIC SEMICONDUCTOR INC8 citations84
US10840385B1Nov 17, 2020
Performance SiC Schottky diodes
GENESIC SEMICONDUCTOR INC7 citations84
US10763356B1Sep 1, 2020
Manufacture of power devices having inversion channel
GENESIC SEMICONDUCTOR INC17 citations83
WESTINGHOUSE ELECTRIC CORP
1 patentWIDE BANDGAP LLC
1 patent(unassigned)
1 patentNORTHROP GRUMMAN CORP
1 patentWIDEBANDGAP LLC
1 patentShowing the top 50 of 96 patents by PatentIndex Score.