Inventor
LEE CHANG-JAE
KR84 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHANG-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG SEMICON CO LTD
20 patentsUS5656860AAug 12, 1997
Wiring structure for semiconductor device and fabrication method therefor
LG SEMICON CO LTD54 citations96
US6174774B1Jan 16, 2001
Method of fabricating semiconductor device
LG SEMICON CO LTD40 citations93
US6078093AJun 20, 2000
Capacitor structure of semiconductor device for high dielectric constant
LG SEMICON CO LTD17 citations93
US5981320ANov 9, 1999
Method of fabricating cmosfet
LG SEMICON CO LTD21 citations93
US5741722AApr 21, 1998
Method for manufacturing DRAM device using high dielectric constant
LG SEMICON CO LTD36 citations93
US5721155AFeb 24, 1998
Method for forming a via contact of a semiconductor device
LG SEMICON CO LTD25 citations93
US6096646AAug 1, 2000
Method for forming metal line of semiconductor device
LG SEMICON CO LTD26 citations92
US5686339ANov 11, 1997
High dielectric constant capacitor and a fabricating method thereof
LG SEMICON CO LTD33 citations91
US5639678AJun 17, 1997
Method of making semiconductor device with metal silicide nitride layer and metal silicide
LG SEMICON CO LTD28 citations91
US5897350AApr 27, 1999
Memory cell structure for semiconductor memory device and fabricating method thereof
LG SEMICON CO LTD25 citations90
US5658815AAug 19, 1997
Method of fabricating silicided LDD transistor
LG SEMICON CO LTD27 citations90
US6080615AJun 27, 2000
Method for forming a semiconductor device incorporating a dummy gate electrode
LG SEMICON CO LTD11 citations74
US6057232AMay 2, 2000
Wiring structure for semiconductor device and fabrication method therefor
LG SEMICON CO LTD12 citations74
US5866458AFeb 2, 1999
Method for fabricating a CMOS
LG SEMICON CO LTD13 citations74
US5801086ASep 1, 1998
Process for formation of contact conductive layer in a semiconductor device
LG SEMICON CO LTD14 citations74
US5770026AJun 23, 1998
Semiconductor fabrication apparatus having improved sputtering collimator and wiring method for a semiconductor device using such apparatus
LG SEMICON CO LTD14 citations74
US5686344ANov 11, 1997
Device isolation method for semiconductor device
LG SEMICON CO LTD12 citations74
US5661067AAug 26, 1997
Method for forming twin well
LG SEMICON CO LTD10 citations74
US5830791ANov 3, 1998
Manufacturing process for a DRAM with a buried region
LG SEMICON CO LTD15 citations72
US5663585ASep 2, 1997
DRAM having a buried region contacted through a field region
LG SEMICON CO LTD9 citations72
LG ELECTRONICS INC
9 patentsUS7693125B2Apr 6, 2010
Supporting hybrid automatic retransmission request in orthogonal frequency division multiplexing access radio access system
LG ELECTRONICS INC71 citations98
US7194288B2Mar 20, 2007
Periodic ranging in a wireless access system for mobile station in sleep mode
LG ELECTRONICS INC42 citations96
US7558605B2Jul 7, 2009
Periodic ranging in a wireless access system for mobile station in sleep mode
LG ELECTRONICS INC17 citations92
US7873359B2Jan 18, 2011
Mobile broadband wireless access system for transferring service information during handover
LG ELECTRONICS INC34 citations90
US7957761B2Jun 7, 2011
Method of communicating neighbor base station information
LG ELECTRONICS INC7 citations84
US7769384B2Aug 3, 2010
Mobile broadband wireless access system for transferring service information during handover
LG ELECTRONICS INC14 citations81
US7889708B2Feb 15, 2011
Supporting hybrid automatic retransmission request in orthogonal frequency division multiplexing access radio access system
LG ELECTRONICS INC6 citations74
US7853286B2Dec 14, 2010
Method of communicating neighbor base station information
LG ELECTRONICS INC6 citations74
US7725796B2May 25, 2010
Allocating data bursts and supporting hybrid auto retransmission request in orthogonal frequency division multiplexing access radio access system
LG ELECTRONICS INC7 citations74
GOLD STAR ELECTRONICS
7 patentsUS5646052AJul 8, 1997
Isolation region structure of semiconductor device and method for making
GOLD STAR ELECTRONICS26 citations93
US5468665ANov 21, 1995
Process for making a semiconductor MOS transistor employing a temporary spacer
GOLD STAR ELECTRONICS34 citations92
US5583064ADec 10, 1996
Semiconductor device and process for formation thereof
GOLD STAR ELECTRONICS36 citations91
US5567244AOct 22, 1996
Process for cleaning semiconductor devices
GOLD STAR ELECTRONICS30 citations90
US5604138AFeb 18, 1997
Process for making a semiconductor MOS transistor
GOLD STAR ELECTRONICS18 citations84
US5686343ANov 11, 1997
Process for isolating a semiconductor layer on an insulator
GOLD STAR ELECTRONICS15 citations74
US5563091AOct 8, 1996
Method for isolating semiconductor elements
GOLD STAR ELECTRONICS18 citations74
HYUNDAI ELECTRONICS IND
5 patentsUS6303493B1Oct 16, 2001
Wiring for semiconductor device and method for forming the same
HYUNDAI ELECTRONICS IND16 citations93
US6495920B2Dec 17, 2002
Wiring for semiconductor device
HYUNDAI ELECTRONICS IND14 citations84
US6258647B1Jul 10, 2001
Method of fabricating semiconductor device
HYUNDAI ELECTRONICS IND9 citations74
US6353254B1Mar 5, 2002
Device isolation structure and device isolation method for a semiconductor power integrated circuit
HYUNDAI ELECTRONICS IND6 citations73
US6344391B1Feb 5, 2002
Fabrication method of semiconductor device with diagonal capacitor bit line
HYUNDAI ELECTRONICS IND6 citations73
LEE CHANG-JAE
2 patentsHYUNDAI MOTOR CO LTD
2 patentsKIM BEOM JOON
1 patentRYU KI SEON
1 patentHYNIX SEMICONDUCTOR INC
1 patentGOLDSTAR ELECTRON COMPANY LTD
1 patentLEE CHANG JAE
1 patentShowing the top 50 of 84 patents by PatentIndex Score.