Inventor

LINTHICUM KEVIN J

US52 patents

⚠️ This page may combine multiple inventors who share the name “LINTHICUM KEVIN J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LINTHICUM KEVIN J

UNIV NORTH CAROLINA STATE

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

NITRONEX CORP

Gallium nitride materials and methods

Gallium nitride materials and methods

Semiconductor device-based sensors

Gallium nitride material devices and methods including backside vias

Gallium nitride material structures including substrates and methods associated with the same

Gallium nitride material devices and methods of forming the same

Gallium nitride material transistors and methods associated with the same

Gallium nitride material structures including substrates and methods associated with the same

Gallium nitride material transistors and methods associated with the same

Gallium nitride materials including thermally conductive regions

INT RECTIFIER CORP

Gallium nitride semiconductor structures with compositionally-graded transition layer

Gallium nitride semiconductor structures with compositionally-graded transition layer

Gallium nitride devices with aluminum nitride intermediate layer

Gallium nitride devices with gallium nitride alloy intermediate layer

Gallium nitride devices with aluminum nitride alloy intermediate layer

Gallium nitride semiconductor structures with compositionally-graded transition layer

INFINEON TECHNOLOGIES AMERICAS CORP

Semiconductor material having a compositionally-graded transition layer

Semiconductor structure with compositionally-graded transition layer

III-nitride based semiconductor structure

Gallium nitride devices with discontinuously graded transition layer

MACOM TECH SOLUTIONS HOLDINGS INC

Parasitic channel mitigation using silicon carbide diffusion barrier regions

Parasitic channel mitigation using elemental diboride diffusion barrier regions

Parasitic channel mitigation in semiconductor structures

Parasitic channel mitigation using silicon carbide diffusion barrier regions

M/A-COM TECH SOLUTIONS HOLDINGS INC

Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions

Parasitic channel mitigation in III-nitride material semiconductor structures

III-nitride semiconductor structures comprising spatially patterned implanted species

NOERH CAROLINA STATE UNIVERSIT

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

WEEKS JR T WARREN

Gallium nitride materials and methods