P

Inventor

RAINA KANWAL K

US39 patents
⚠️ This page may combine multiple inventors who share the name “RAINA KANWAL K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

36 patents
US6537427B1Mar 25, 2003

Deposition of smooth aluminum films

MICRON TECHNOLOGY INC96 citations99
US6137214AOct 24, 2000

Display device with silicon-containing adhesion layer

MICRON TECHNOLOGY INC92 citations98
US6106351AAug 22, 2000

Methods of manufacturing microelectronic substrate assemblies for use in planarization processes

MICRON TECHNOLOGY INC57 citations96
US6064149AMay 16, 2000

Field emission device with silicon-containing adhesion layer

MICRON TECHNOLOGY INC64 citations96
US6657376B1Dec 2, 2003

Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon

MICRON TECHNOLOGY INC21 citations93
US6211608B1Apr 3, 2001

Field emission device with buffer layer and method of making

MICRON TECHNOLOGY INC41 citations93
US6635983B1Oct 21, 2003

Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate

MICRON TECHNOLOGY INC17 citations92
US6348403B1Feb 19, 2002

Suppression of hillock formation in thin aluminum films

MICRON TECHNOLOGY INC24 citations92
US6015323AJan 18, 2000

Field emission display cathode assembly government rights

MICRON TECHNOLOGY INC28 citations92
US6461211B2Oct 8, 2002

Method of forming resistor with adhesion layer for electron emission device

MICRON TECHNOLOGY INC14 citations84
US6838815B2Jan 4, 2005

Field emission display with smooth aluminum film

MICRON TECHNOLOGY INC4 citations74
US6638399B2Oct 28, 2003

Deposition of smooth aluminum films

MICRON TECHNOLOGY INC4 citations74
US6545407B1Apr 8, 2003

Electron emission apparatus

MICRON TECHNOLOGY INC8 citations74
US6509686B1Jan 21, 2003

Field emission display cathode assembly with gate buffer layer

MICRON TECHNOLOGY INC5 citations74
US6425791B1Jul 30, 2002

Method of making a field emission device with buffer layer

MICRON TECHNOLOGY INC8 citations74
US6222271B1Apr 24, 2001

Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom

MICRON TECHNOLOGY INC7 citations74
US6194783B1Feb 27, 2001

Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom

MICRON TECHNOLOGY INC10 citations74
US6140701AOct 31, 2000

Suppression of hillock formation in thin aluminum films

MICRON TECHNOLOGY INC5 citations74
US6139385AOct 31, 2000

Method of making a field emission device with silicon-containing adhesion layer

MICRON TECHNOLOGY INC10 citations74
US6057238AMay 2, 2000

Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom

MICRON TECHNOLOGY INC13 citations74
US5969423AOct 19, 1999

Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition

MICRON TECHNOLOGY INC10 citations74
US7097526B2Aug 29, 2006

Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate

MICRON TECHNOLOGY INC5 citations73
US7161211B2Jan 9, 2007

Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition

MICRON TECHNOLOGY INC3 citations63
US6893905B2May 17, 2005

Method of forming substantially hillock-free aluminum-containing components

MICRON TECHNOLOGY INC1 citations63
US6455939B1Sep 24, 2002

Substantially hillock-free aluminum-containing components

MICRON TECHNOLOGY INC3 citations63
US6440505B1Aug 27, 2002

Methods for forming field emission display devices

MICRON TECHNOLOGY INC2 citations63
US6165568ADec 26, 2000

Methods for forming field emission display devices

MICRON TECHNOLOGY INC2 citations63
US6107688AAug 22, 2000

Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition

MICRON TECHNOLOGY INC3 citations63
US7268481B2Sep 11, 2007

Field emission display with smooth aluminum film

MICRON TECHNOLOGY INC0 citations52
US7101586B2Sep 5, 2006

Method to increase the emission current in FED displays through the surface modification of the emitters

MICRON TECHNOLOGY INC1 citations52
US7088037B2Aug 8, 2006

Field emission display device

MICRON TECHNOLOGY INC1 citations52
US7052923B2May 30, 2006

Field emission display with smooth aluminum film

MICRON TECHNOLOGY INC0 citations52
US6831403B2Dec 14, 2004

Field emission display cathode assembly

MICRON TECHNOLOGY INC0 citations52
US6239548B1May 29, 2001

Microelectronic substrate assemblies having elements in low compression state

MICRON TECHNOLOGY INC1 citations52
US7239075B2Jul 3, 2007

Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate

MICRON TECHNOLOGY INC0 citations51
US6911766B2Jun 28, 2005

Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate

MICRON TECHNOLOGY INC0 citations51

TEXAS A & M UNIV SYS

3 patents