Inventor
RAINA KANWAL K
US39 patents
⚠️ This page may combine multiple inventors who share the name “RAINA KANWAL K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
36 patentsUS6537427B1Mar 25, 2003
Deposition of smooth aluminum films
MICRON TECHNOLOGY INC96 citations99
US6137214AOct 24, 2000
Display device with silicon-containing adhesion layer
MICRON TECHNOLOGY INC92 citations98
US6106351AAug 22, 2000
Methods of manufacturing microelectronic substrate assemblies for use in planarization processes
MICRON TECHNOLOGY INC57 citations96
US6064149AMay 16, 2000
Field emission device with silicon-containing adhesion layer
MICRON TECHNOLOGY INC64 citations96
US6657376B1Dec 2, 2003
Electron emission devices and field emission display devices having buffer layer of microcrystalline silicon
MICRON TECHNOLOGY INC21 citations93
US6211608B1Apr 3, 2001
Field emission device with buffer layer and method of making
MICRON TECHNOLOGY INC41 citations93
US6635983B1Oct 21, 2003
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission device baseplate
MICRON TECHNOLOGY INC17 citations92
US6348403B1Feb 19, 2002
Suppression of hillock formation in thin aluminum films
MICRON TECHNOLOGY INC24 citations92
US6015323AJan 18, 2000
Field emission display cathode assembly government rights
MICRON TECHNOLOGY INC28 citations92
US6461211B2Oct 8, 2002
Method of forming resistor with adhesion layer for electron emission device
MICRON TECHNOLOGY INC14 citations84
US6838815B2Jan 4, 2005
Field emission display with smooth aluminum film
MICRON TECHNOLOGY INC4 citations74
US6638399B2Oct 28, 2003
Deposition of smooth aluminum films
MICRON TECHNOLOGY INC4 citations74
US6545407B1Apr 8, 2003
Electron emission apparatus
MICRON TECHNOLOGY INC8 citations74
US6509686B1Jan 21, 2003
Field emission display cathode assembly with gate buffer layer
MICRON TECHNOLOGY INC5 citations74
US6425791B1Jul 30, 2002
Method of making a field emission device with buffer layer
MICRON TECHNOLOGY INC8 citations74
US6222271B1Apr 24, 2001
Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
MICRON TECHNOLOGY INC7 citations74
US6194783B1Feb 27, 2001
Method of using hydrogen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
MICRON TECHNOLOGY INC10 citations74
US6140701AOct 31, 2000
Suppression of hillock formation in thin aluminum films
MICRON TECHNOLOGY INC5 citations74
US6139385AOct 31, 2000
Method of making a field emission device with silicon-containing adhesion layer
MICRON TECHNOLOGY INC10 citations74
US6057238AMay 2, 2000
Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
MICRON TECHNOLOGY INC13 citations74
US5969423AOct 19, 1999
Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
MICRON TECHNOLOGY INC10 citations74
US7097526B2Aug 29, 2006
Method of forming nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
MICRON TECHNOLOGY INC5 citations73
US7161211B2Jan 9, 2007
Aluminum-containing film derived from using hydrogen and oxygen gas in sputter deposition
MICRON TECHNOLOGY INC3 citations63
US6893905B2May 17, 2005
Method of forming substantially hillock-free aluminum-containing components
MICRON TECHNOLOGY INC1 citations63
US6455939B1Sep 24, 2002
Substantially hillock-free aluminum-containing components
MICRON TECHNOLOGY INC3 citations63
US6440505B1Aug 27, 2002
Methods for forming field emission display devices
MICRON TECHNOLOGY INC2 citations63
US6165568ADec 26, 2000
Methods for forming field emission display devices
MICRON TECHNOLOGY INC2 citations63
US6107688AAug 22, 2000
Aluminum-containing films derived from using hydrogen and oxygen gas in sputter deposition
MICRON TECHNOLOGY INC3 citations63
US7268481B2Sep 11, 2007
Field emission display with smooth aluminum film
MICRON TECHNOLOGY INC0 citations52
US7101586B2Sep 5, 2006
Method to increase the emission current in FED displays through the surface modification of the emitters
MICRON TECHNOLOGY INC1 citations52
US7088037B2Aug 8, 2006
Field emission display device
MICRON TECHNOLOGY INC1 citations52
US7052923B2May 30, 2006
Field emission display with smooth aluminum film
MICRON TECHNOLOGY INC0 citations52
US6831403B2Dec 14, 2004
Field emission display cathode assembly
MICRON TECHNOLOGY INC0 citations52
US6239548B1May 29, 2001
Microelectronic substrate assemblies having elements in low compression state
MICRON TECHNOLOGY INC1 citations52
US7239075B2Jul 3, 2007
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
MICRON TECHNOLOGY INC0 citations51
US6911766B2Jun 28, 2005
Nitrogen and phosphorus doped amorphous silicon as resistor for field emission display device baseplate
MICRON TECHNOLOGY INC0 citations51
TEXAS A & M UNIV SYS
3 patentsUS6153262ANov 28, 2000
Method for forming SbSI thin films
TEXAS A & M UNIV SYS2 citations59
US5407906AApr 18, 1995
Epitaxial layers of 2122 BCSCO superconductor thin films having single crystalline structure
TEXAS A & M UNIV SYS2 citations59
US6264750B1Jul 24, 2001
Method and system for forming SbSI thin films
TEXAS A & M UNIV SYS0 citations48