Inventor
LU WEN-PIN
TW25 patents
⚠️ This page may combine multiple inventors who share the name “LU WEN-PIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
18 patentsUS9589982B1Mar 7, 2017
Structure and method of operation for improved gate capacity for 3D NOR flash memory
MACRONIX INT CO LTD215 citations98
US6496417B1Dec 17, 2002
Method and integrated circuit for bit line soft programming (BLISP)
MACRONIX INT CO LTD83 citations97
US7399674B2Jul 15, 2008
Method of fabricating NAND-type flash EEPROM without field oxide isolation
MACRONIX INT CO LTD12 citations84
US6812149B1Nov 2, 2004
Method of forming junction isolation to isolate active elements
MACRONIX INT CO LTD13 citations84
US7116606B2Oct 3, 2006
Method and circuit of plasma damage protection
MACRONIX INT CO LTD10 citations74
US9437612B1Sep 6, 2016
Three-dimensional memory
MACRONIX INT CO LTD3 citations72
US7214983B2May 8, 2007
Non-volatile memory and fabricating method thereof
MACRONIX INT CO LTD8 citations72
US9524784B1Dec 20, 2016
Device and method for improved threshold voltage distribution for non-volatile memory
MACRONIX INT CO LTD2 citations62
US7924591B2Apr 12, 2011
Memory device with shielding plugs adjacent to a dummy word line thereof
MACRONIX INT CO LTD2 citations62
US6521518B1Feb 18, 2003
Method of eliminating weakness caused by high density plasma dielectric layer
MACRONIX INT CO LTD4 citations62
US6413840B1Jul 2, 2002
Method of gettering layer for improving chemical-mechanical polishing process in flash memory production and semiconductor structure thereof
MACRONIX INT CO LTD3 citations62
US7596028B2Sep 29, 2009
Variable program and program verification methods for a virtual ground memory in easing buried drain contacts
MACRONIX INT CO LTD6 citations59
US7157360B2Jan 2, 2007
Memory device and method for forming a passivation layer thereon
MACRONIX INT CO LTD2 citations58
US7012004B2Mar 14, 2006
Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof
MACRONIX INT CO LTD3 citations56
US7847336B2Dec 7, 2010
Method of fabricating NAND-type flash EEPROMS without field oxide isolation
MACRONIX INT CO LTD0 citations52
US6680256B2Jan 20, 2004
Process for planarization of flash memory cell
MACRONIX INT CO LTD0 citations51
US7776690B2Aug 17, 2010
Method of forming a contact on a semiconductor device
MACRONIX INT CO LTD0 citations50
US6867466B2Mar 15, 2005
Memory device and method for forming a passivation layer thereon
MACRONIX INT CO LTD1 citations47