Inventor
JENG PEI-REN
TW98 patents
⚠️ This page may combine multiple inventors who share the name “JENG PEI-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
23 patentsUS6380068B2Apr 30, 2002
Method for planarizing a flash memory device
MACRONIX INT CO LTD195 citations96
US6664182B2Dec 16, 2003
Method of improving the interlayer adhesion property of low-k layers in a dual damascene process
MACRONIX INT CO LTD33 citations93
US6455440B1Sep 24, 2002
Method for preventing polysilicon stringer in memory device
MACRONIX INT CO LTD33 citations93
US6303490B1Oct 16, 2001
Method for barrier layer in copper manufacture
MACRONIX INT CO LTD42 citations93
US6331472B1Dec 18, 2001
Method for forming shallow trench isolation
MACRONIX INT CO LTD26 citations92
US6326269B1Dec 4, 2001
Method of fabricating self-aligned multilevel mask ROM
MACRONIX INT CO LTD20 citations86
US6335259B1Jan 1, 2002
Method of forming shallow trench isolation
MACRONIX INT CO LTD15 citations84
US6939768B2Sep 6, 2005
Method of forming self-aligned contacts
MACRONIX INT CO LTD9 citations74
US6559009B2May 6, 2003
Method of fabricating a high-coupling ratio flash memory
MACRONIX INT CO LTD10 citations74
US6372660B1Apr 16, 2002
Method for patterning a dual damascene with masked implantation
MACRONIX INT CO LTD7 citations74
US6403424B1Jun 11, 2002
Method for forming self-aligned mask read only memory by dual damascene trenches
MACRONIX INT CO LTD9 citations73
US6319781B1Nov 20, 2001
Method of fabricating self-aligned multilevel mask ROM
MACRONIX INT CO LTD8 citations73
US6849504B2Feb 1, 2005
Method for fabricating flash memory
MACRONIX INT CO LTD8 citations72
US6335274B1Jan 1, 2002
Method for forming a high-RI oxide film to reduce fluorine diffusion in HDP FSG process
MACRONIX INT CO LTD12 citations71
US6908814B2Jun 21, 2005
Process for a flash memory with high breakdown resistance between gate and contact
MACRONIX INT CO LTD8 citations69
US6984553B2Jan 10, 2006
Method for forming shallow trench isolation with control of bird beak
MACRONIX INT CO LTD4 citations63
US6706611B2Mar 16, 2004
Method for patterning a dual damascene with retrograde implantation
MACRONIX INT CO LTD5 citations63
US6521548B2Feb 18, 2003
Method of forming a spin-on-passivation layer
MACRONIX INT CO LTD6 citations63
US6474257B2Nov 5, 2002
High density plasma chemical vapor deposition chamber
MACRONIX INT CO LTD6 citations63
US6472271B1Oct 29, 2002
Planarization method of memory unit of flash memory
MACRONIX INT CO LTD2 citations63
US6403428B1Jun 11, 2002
Method of forming shallow trench isolation
MACRONIX INT CO LTD4 citations63
US6403470B1Jun 11, 2002
Method for fabricating a dual damascene structure
MACRONIX INT CO LTD2 citations63
US6391718B1May 21, 2002
Planarization method for flash memory device
MACRONIX INT CO LTD5 citations63
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS9859386B2Jan 2, 2018
Self aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD496 citations99
US9548366B1Jan 17, 2017
Self aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD583 citations99
US9831345B2Nov 28, 2017
FinFET with rounded source/drain profile
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9818846B2Nov 14, 2017
Selectively deposited spacer film for metal gate sidewall protection
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10483396B1Nov 19, 2019
Interfacial layer between fin and source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US9873943B2Jan 23, 2018
Apparatus and method for spatial atomic layer deposition
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US11581425B2Feb 14, 2023
Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10388792B2Aug 20, 2019
FinFET with rounded source/drain profile
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9911829B2Mar 6, 2018
FinFET with bottom SiGe layer in source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11854901B2Dec 26, 2023
Semiconductor method and device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10388531B2Aug 20, 2019
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10161039B2Dec 25, 2018
Apparatus and method for spatial atomic layer deposition
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11948840B2Apr 2, 2024
Protective layer over FinFET and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11302782B2Apr 12, 2022
In-situ straining epitaxial process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12191212B2Jan 7, 2025
Semiconductor method and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12159925B2Dec 3, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
3 patentsUS8963258B2Feb 24, 2015
FinFET with bottom SiGe layer in source/drain
TAIWAN SEMICONDUCTOR MFG342 citations99
US9293581B2Mar 22, 2016
FinFET with bottom SiGe layer in source/drain
TAIWAN SEMICONDUCTOR MFG8 citations84
US7723226B2May 25, 2010
Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio
TAIWAN SEMICONDUCTOR MFG11 citations84
IND TECH RES INST
3 patentsUS7393745B2Jul 1, 2008
Method for fabricating self-aligned double layered silicon-metal nanocrystal memory element
IND TECH RES INST17 citations93
US7446038B2Nov 4, 2008
Interlayer interconnect of three-dimensional memory and method for manufacturing the same
IND TECH RES INST14 citations84
US7683438B2Mar 23, 2010
Self-aligned double layered silicon-metal nanocrystal memory element, method for fabricating the same, and memory having the memory element
IND TECH RES INST2 citations63
HOLTEK MICROELECTRONICS INC
1 patentNG JIN-AUN
1 patentJENG PEI-REN
1 patentLU CHANG-SHEN
1 patentLIOU YU-LING
1 patentShowing the top 50 of 98 patents by PatentIndex Score.