P

Inventor

JENG PEI-REN

TW98 patents
⚠️ This page may combine multiple inventors who share the name “JENG PEI-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

23 patents
US6380068B2Apr 30, 2002

Method for planarizing a flash memory device

MACRONIX INT CO LTD195 citations96
US6664182B2Dec 16, 2003

Method of improving the interlayer adhesion property of low-k layers in a dual damascene process

MACRONIX INT CO LTD33 citations93
US6455440B1Sep 24, 2002

Method for preventing polysilicon stringer in memory device

MACRONIX INT CO LTD33 citations93
US6303490B1Oct 16, 2001

Method for barrier layer in copper manufacture

MACRONIX INT CO LTD42 citations93
US6331472B1Dec 18, 2001

Method for forming shallow trench isolation

MACRONIX INT CO LTD26 citations92
US6326269B1Dec 4, 2001

Method of fabricating self-aligned multilevel mask ROM

MACRONIX INT CO LTD20 citations86
US6335259B1Jan 1, 2002

Method of forming shallow trench isolation

MACRONIX INT CO LTD15 citations84
US6939768B2Sep 6, 2005

Method of forming self-aligned contacts

MACRONIX INT CO LTD9 citations74
US6559009B2May 6, 2003

Method of fabricating a high-coupling ratio flash memory

MACRONIX INT CO LTD10 citations74
US6372660B1Apr 16, 2002

Method for patterning a dual damascene with masked implantation

MACRONIX INT CO LTD7 citations74
US6403424B1Jun 11, 2002

Method for forming self-aligned mask read only memory by dual damascene trenches

MACRONIX INT CO LTD9 citations73
US6319781B1Nov 20, 2001

Method of fabricating self-aligned multilevel mask ROM

MACRONIX INT CO LTD8 citations73
US6849504B2Feb 1, 2005

Method for fabricating flash memory

MACRONIX INT CO LTD8 citations72
US6335274B1Jan 1, 2002

Method for forming a high-RI oxide film to reduce fluorine diffusion in HDP FSG process

MACRONIX INT CO LTD12 citations71
US6908814B2Jun 21, 2005

Process for a flash memory with high breakdown resistance between gate and contact

MACRONIX INT CO LTD8 citations69
US6984553B2Jan 10, 2006

Method for forming shallow trench isolation with control of bird beak

MACRONIX INT CO LTD4 citations63
US6706611B2Mar 16, 2004

Method for patterning a dual damascene with retrograde implantation

MACRONIX INT CO LTD5 citations63
US6521548B2Feb 18, 2003

Method of forming a spin-on-passivation layer

MACRONIX INT CO LTD6 citations63
US6474257B2Nov 5, 2002

High density plasma chemical vapor deposition chamber

MACRONIX INT CO LTD6 citations63
US6472271B1Oct 29, 2002

Planarization method of memory unit of flash memory

MACRONIX INT CO LTD2 citations63
US6403428B1Jun 11, 2002

Method of forming shallow trench isolation

MACRONIX INT CO LTD4 citations63
US6403470B1Jun 11, 2002

Method for fabricating a dual damascene structure

MACRONIX INT CO LTD2 citations63
US6391718B1May 21, 2002

Planarization method for flash memory device

MACRONIX INT CO LTD5 citations63

TAIWAN SEMICONDUCTOR MFG CO LTD

16 patents
US9859386B2Jan 2, 2018

Self aligned contact scheme

TAIWAN SEMICONDUCTOR MFG CO LTD496 citations99
US9548366B1Jan 17, 2017

Self aligned contact scheme

TAIWAN SEMICONDUCTOR MFG CO LTD583 citations99
US9831345B2Nov 28, 2017

FinFET with rounded source/drain profile

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9818846B2Nov 14, 2017

Selectively deposited spacer film for metal gate sidewall protection

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10483396B1Nov 19, 2019

Interfacial layer between fin and source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US9873943B2Jan 23, 2018

Apparatus and method for spatial atomic layer deposition

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US11581425B2Feb 14, 2023

Method for manufacturing semiconductor structure with enlarged volumes of source-drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10388792B2Aug 20, 2019

FinFET with rounded source/drain profile

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9911829B2Mar 6, 2018

FinFET with bottom SiGe layer in source/drain

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11854901B2Dec 26, 2023

Semiconductor method and device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10388531B2Aug 20, 2019

Self-aligned insulated film for high-k metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10161039B2Dec 25, 2018

Apparatus and method for spatial atomic layer deposition

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11948840B2Apr 2, 2024

Protective layer over FinFET and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11302782B2Apr 12, 2022

In-situ straining epitaxial process

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12191212B2Jan 7, 2025

Semiconductor method and device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12159925B2Dec 3, 2024

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

TAIWAN SEMICONDUCTOR MFG

3 patents

IND TECH RES INST

3 patents

HOLTEK MICROELECTRONICS INC

1 patent

NG JIN-AUN

1 patent

JENG PEI-REN

1 patent

LU CHANG-SHEN

1 patent

LIOU YU-LING

1 patent

Showing the top 50 of 98 patents by PatentIndex Score.