Inventor
DOVERSPIKE KATHLEEN MARIE
US27 patents
⚠️ This page may combine multiple inventors who share the name “DOVERSPIKE KATHLEEN MARIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
23 patentsUS6906352B2Jun 14, 2005
Group III nitride LED with undoped cladding layer and multiple quantum well
CREE INC168 citations99
US7312474B2Dec 25, 2007
Group III nitride based superlattice structures
CREE INC153 citations98
US6958497B2Oct 25, 2005
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
CREE INC290 citations98
US6459100B1Oct 1, 2002
Vertical geometry ingan LED
CREE INC201 citations98
US6201262B1Mar 13, 2001
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
CREE INC604 citations98
US6187606B1Feb 13, 2001
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
CREE INC484 citations98
US7170097B2Jan 30, 2007
Inverted light emitting diode on conductive substrate
CREE INC50 citations96
US6800876B2Oct 5, 2004
Group III nitride LED with undoped cladding layer (5000.137)
CREE INC65 citations96
US6610551B1Aug 26, 2003
Vertical geometry InGaN LED
CREE INC68 citations96
US6534797B1Mar 18, 2003
Group III nitride light emitting devices with gallium-free layers
CREE INC50 citations96
US6373077B1Apr 16, 2002
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
CREE INC53 citations96
US7692209B2Apr 6, 2010
Group III nitride LED with undoped cladding layer
CREE INC12 citations93
US7071490B2Jul 4, 2006
Group III nitride LED with silicon carbide substrate
CREE INC12 citations93
US6987281B2Jan 17, 2006
Group III nitride contact structures for light emitting devices
CREE INC21 citations93
US6717185B2Apr 6, 2004
Light emitting devices with Group III nitride contact layer and superlattice
CREE INC30 citations93
US7034328B2Apr 25, 2006
Vertical geometry InGaN LED
CREE INC24 citations92
US6630690B2Oct 7, 2003
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
CREE INC17 citations92
US6952024B2Oct 4, 2005
Group III nitride LED with silicon carbide cladding layer
CREE INC17 citations84
USRE42007EDec 28, 2010
Vertical geometry InGaN LED
CREE INC6 citations73
US6492193B1Dec 10, 2002
Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
CREE INC7 citations73
US6784461B2Aug 31, 2004
Group III nitride light emitting devices with progressively graded layers
CREE INC3 citations63
USRE46588EOct 24, 2017
Group III nitride LED with undoped cladding layer
CREE INC0 citations52
USRE46589EOct 24, 2017
Group III nitride LED with undoped cladding layer and multiple quantum well
CREE INC1 citations52
EMERSON DAVID TODD
2 patentsUS8227268B2Jul 24, 2012
Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
EMERSON DAVID TODD7 citations83
US9112083B2Aug 18, 2015
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
EMERSON DAVID TODD3 citations73