Inventor
UEMURA TOSHIYA
JP68 patents
⚠️ This page may combine multiple inventors who share the name “UEMURA TOSHIYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOYODA GOSEI KK
48 patentsUS6331450B1Dec 18, 2001
Method of manufacturing semiconductor device using group III nitride compound
TOYODA GOSEI KK137 citations99
US6310364B1Oct 30, 2001
Light-emitting apparatus
TOYODA GOSEI KK134 citations99
US6794690B2Sep 21, 2004
Group III nitride compound semiconductor light-emitting element
TOYODA GOSEI KK88 citations98
US7109529B2Sep 19, 2006
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK67 citations97
US6936859B1Aug 30, 2005
Light-emitting semiconductor device using group III nitride compound
TOYODA GOSEI KK70 citations97
US7038246B2May 2, 2006
Light emitting apparatus
TOYODA GOSEI KK57 citations96
US6649941B2Nov 18, 2003
Method for manufacturing semiconductor device using group III nitride compound
TOYODA GOSEI KK48 citations96
US6500689B2Dec 31, 2002
Process for producing GaN related compound semiconductor
TOYODA GOSEI KK46 citations96
US6291840B1Sep 18, 2001
GaN related compound semiconductor light-emitting device
TOYODA GOSEI KK38 citations96
US6008539ADec 28, 1999
Electrodes for p-type group III nitride compound semiconductors
TOYODA GOSEI KK76 citations96
US7176623B2Feb 13, 2007
Light emitting device
TOYODA GOSEI KK52 citations95
US6777805B2Aug 17, 2004
Group-III nitride compound semiconductor device
TOYODA GOSEI KK42 citations95
US6727518B2Apr 27, 2004
Light emitting device using group III nitride compound semiconductor
TOYODA GOSEI KK43 citations95
US7138662B2Nov 21, 2006
Light-emitting device
TOYODA GOSEI KK21 citations93
US7023020B2Apr 4, 2006
Group III nitride compound semiconductor light-emitting device
TOYODA GOSEI KK23 citations93
US6917059B2Jul 12, 2005
III group nitride system compound semiconductor light emitting element
TOYODA GOSEI KK21 citations93
US6878971B2Apr 12, 2005
Light-emitting apparatus
TOYODA GOSEI KK19 citations93
US7754514B2Jul 13, 2010
Method of making a light emitting element
TOYODA GOSEI KK48 citations92
US7005684B2Feb 28, 2006
Group III nitride based semiconductor luminescent element
TOYODA GOSEI KK35 citations92
US6955936B2Oct 18, 2005
Methods and devices related to electrode pads for p-type Group III nitride compound semiconductors
TOYODA GOSEI KK24 citations92
US6831305B2Dec 14, 2004
Semiconductor light-emitting device
TOYODA GOSEI KK40 citations92
US6806571B2Oct 19, 2004
III nitride compound semiconductor element an electrode forming method
TOYODA GOSEI KK20 citations92
US6734468B2May 11, 2004
Devices related to electrode pads for p-type group III nitride compound semiconductors
TOYODA GOSEI KK23 citations92
US6570186B1May 27, 2003
Light emitting device using group III nitride compound semiconductor
TOYODA GOSEI KK30 citations92
US6521999B1Feb 18, 2003
Transparent electrode film and group III nitride semiconductor device
TOYODA GOSEI KK26 citations92
US6335212B1Jan 1, 2002
Method of fabricating a semiconductor light-emitting element
TOYODA GOSEI KK20 citations92
US6121127ASep 19, 2000
Methods and devices related to electrodes for p-type group III nitride compound semiconductors
TOYODA GOSEI KK38 citations92
US6033927AMar 7, 2000
Method for separating a substrate of a group III nitride semiconductor light-emitting device
TOYODA GOSEI KK42 citations92
US5803131ASep 8, 1998
Fuel filler pipe
TOYODA GOSEI KK39 citations92
US5073011ADec 17, 1991
Electrochromic device with a reference electrochromic element
TOYODA GOSEI KK44 citations92
US7157294B2Jan 2, 2007
Group III nitride compound semiconductor light-emitting element
TOYODA GOSEI KK45 citations91
US6956245B2Oct 18, 2005
Group III nitride compound semiconductor light-emitting element
TOYODA GOSEI KK42 citations91
US6960485B2Nov 1, 2005
Light-emitting device using a group III nitride compound semiconductor and a method of manufacture
TOYODA GOSEI KK21 citations90
US7576363B2Aug 18, 2009
Group III nitride compound semiconductor light emitting device
TOYODA GOSEI KK29 citations89
US7101780B2Sep 5, 2006
Method for manufacturing Group-III nitride compound semiconductor device
TOYODA GOSEI KK13 citations84
US7071495B2Jul 4, 2006
III group nitride system compound semiconductor light emitting element and method of making same
TOYODA GOSEI KK18 citations84
US7042153B2May 9, 2006
Group III nitride compound semiconductor light emitting element
TOYODA GOSEI KK18 citations84
US7018915B2Mar 28, 2006
Group III nitride compound semiconductor device and method for forming an electrode
TOYODA GOSEI KK15 citations84
US7015515B2Mar 21, 2006
Group III nitride compound semiconductor device having a superlattice structure
TOYODA GOSEI KK18 citations83
US6861281B2Mar 1, 2005
Group III nitride compound semiconductor light-emitting device and method for producing the same
TOYODA GOSEI KK17 citations83
USD631017SJan 18, 2011
Light emitting diode chip
TOYODA GOSEI KK10 citations82
US7304325B2Dec 4, 2007
Group III nitride compound semiconductor light-emitting device
TOYODA GOSEI KK8 citations74
US7078252B2Jul 18, 2006
Method of making group III nitride compound semiconductor light emitting element
TOYODA GOSEI KK9 citations74
US6835958B2Dec 28, 2004
Light-emitting device
TOYODA GOSEI KK12 citations74
US6103543AAug 15, 2000
Fabrication of device electrodes in gan and related materials
TOYODA GOSEI KK11 citations74
US9368687B2Jun 14, 2016
Group-III nitride semiconductor light-emitting element and manufacturing method therefor
TOYODA GOSEI KK3 citations73
US7042089B2May 9, 2006
Group III nitride compound semiconductor device
TOYODA GOSEI KK10 citations73
US5484516AJan 16, 1996
Resin products and process for producing the same
TOYODA GOSEI KK8 citations73
TOYOTA CHUO KENKYUSHO KK
1 patentUEMURA TOSHIYA
1 patentShowing the top 50 of 68 patents by PatentIndex Score.