Inventor
SCHULER FRANZ
DE27 patents
⚠️ This page may combine multiple inventors who share the name “SCHULER FRANZ”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
16 patentsUS7361924B2Apr 22, 2008
Non-volatile memory element and production method thereof and storage memory arrangement
INFINEON TECHNOLOGIES AG17 citations91
US7262456B2Aug 28, 2007
Bit line structure and production method thereof
INFINEON TECHNOLOGIES AG10 citations84
US7176519B2Feb 13, 2007
Memory cell, memory cell arrangement and method for the production of a memory cell
INFINEON TECHNOLOGIES AG10 citations84
US7433232B2Oct 7, 2008
Memory transistor and memory unit with asymmetrical pocket doping region
INFINEON TECHNOLOGIES AG7 citations74
US7018898B2Mar 28, 2006
Non-volatile two transistor semiconductor memory cell and method for producing the same
INFINEON TECHNOLOGIES AG5 citations74
US7880264B2Feb 1, 2011
Integrated circuit arrangement comprising isolating trenches and a field effect transistor
INFINEON TECHNOLOGIES AG2 citations63
US7709884B2May 4, 2010
Non-volatile two transistor semiconductor memory cell and method for producing the same
INFINEON TECHNOLOGIES AG2 citations63
US7687842B2Mar 30, 2010
Bit line structure and method for the production thereof
INFINEON TECHNOLOGIES AG4 citations63
US7541637B2Jun 2, 2009
Non-volatile semiconductor memory element and corresponding production and operation method
INFINEON TECHNOLOGIES AG3 citations63
US7129540B2Oct 31, 2006
Semiconductor circuit arrangement with trench isolation and fabrication method
INFINEON TECHNOLOGIES AG4 citations61
US6407945B2Jun 18, 2002
Method for reading nonvolatile semiconductor memory configurations
INFINEON TECHNOLOGIES AG5 citations60
US7528038B2May 5, 2009
Non-volatile two-transistor semiconductor memory cell and method for producing the same
INFINEON TECHNOLOGIES AG0 citations52
US7368341B2May 6, 2008
Semiconductor circuit arrangement with trench isolation and fabrication method
INFINEON TECHNOLOGIES AG0 citations51
US8629034B2Jan 14, 2014
Nonvolatile memory element and production method thereof and storage memory arrangement
INFINEON TECHNOLOGIES AG0 citations50
US8377791B2Feb 19, 2013
Nonvolatile memory element and production method thereof and storage memory arrangement
INFINEON TECHNOLOGIES AG0 citations50
US7923342B2Apr 12, 2011
Nonvolatile memory element and production method thereof and storage memory arrangement
INFINEON TECHNOLOGIES AG0 citations50
HOFFMANN LA ROCHE
5 patentsUS7534891B2May 19, 2009
Quinoline derivatives as H3R inverse agonists
HOFFMANN LA ROCHE12 citations83
US7361682B2Apr 22, 2008
Indole derivatives as H3 inverse agonists
HOFFMANN LA ROCHE2 citations61
US7645785B2Jan 12, 2010
Benzimidazole derivatives
HOFFMANN LA ROCHE2 citations60
US7608617B2Oct 27, 2009
Naphthaline derivatives as H3 inverse agonists
HOFFMANN LA ROCHE0 citations51
US7259158B2Aug 21, 2007
Naphthaline derivatives as H3 inverse agonists
HOFFMANN LA ROCHE0 citations51
SCHULER FRANZ
4 patentsUS8691660B2Apr 8, 2014
Semiconductor component with trench isolation and corresponding production method
SCHULER FRANZ7 citations82
US8552524B2Oct 8, 2013
Semiconductor component with trench insulation and corresponding production method
SCHULER FRANZ3 citations61
US8159020B2Apr 17, 2012
Non-volatile two transistor semiconductor memory cell and method for producing the same
SCHULER FRANZ0 citations51
US8154090B2Apr 10, 2012
Non-volatile two-transistor semiconductor memory cell and method for producing the same
SCHULER FRANZ1 citations51