Inventor
BALASUBRAMANIAN NARAYANAN
SG14 patents
⚠️ This page may combine multiple inventors who share the name “BALASUBRAMANIAN NARAYANAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AGENCY SCIENCE TECH & RES
4 patentsUS7294890B2Nov 13, 2007
Fully salicided (FUSA) MOSFET structure
AGENCY SCIENCE TECH & RES24 citations92
US6846720B2Jan 25, 2005
Method to reduce junction leakage current in strained silicon on silicon-germanium devices
AGENCY SCIENCE TECH & RES26 citations92
US7425751B2Sep 16, 2008
Method to reduce junction leakage current in strained silicon on silicon-germanium devices
AGENCY SCIENCE TECH & RES11 citations84
US7397090B2Jul 8, 2008
Gate electrode architecture for improved work function tuning and method of manufacture
AGENCY SCIENCE TECH & RES7 citations71
CHARTERED SEMICONDUCTOR MFG
3 patentsUS5767004AJun 16, 1998
Method for forming a low impurity diffusion polysilicon layer
CHARTERED SEMICONDUCTOR MFG108 citations94
US6468853B1Oct 22, 2002
Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner
CHARTERED SEMICONDUCTOR MFG83 citations92
US6200887B1Mar 13, 2001
Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits
CHARTERED SEMICONDUCTOR MFG10 citations68