Inventor

GEALY F DANIEL

US99 patents

⚠️ This page may combine multiple inventors who share the name “GEALY F DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GEALY F DANIEL

MICRON TECHNOLOGY INC

Deposition methods

Electrical contact for high dielectric constant capacitors and method for fabricating the same

Multilayer electrode for ferroelectric and high dielectric constant capacitors

Semiconductor circuit components and capacitors

Integrated circuit with a capacitor comprising an electrode

Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide

Multilayer electrode for a ferroelectric capacitor

Atomic layer deposition methods

Method for forming a multilayer electrode for a ferroelectric capacitor

Multilayer electrode for a ferroelectric capacitor

Top electrode in a strongly oxidizing environment

Capacitors, methods of forming capacitors, and DRAM memory cells

Method of forming capacitors containing tantalum

Chalcogenide memory device components and composition

Method of forming a capacitor

Methods of forming capacitors

Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials

Electrical contact for high dielectric constant capacitors and method for fabricating the same

Method of forming a capacitor

Semiconductor circuit components and capacitors

Method of processing internal surfaces of a chemical vapor deposition reactor

Comprising agglomerates of one or more noble metals

Method and apparatus for stabilizing high pressure oxidation of a semiconductor device

Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery

Memory cells having a number of conductive diffusion barrier materials and manufacturing methods

Structures incorporating and methods of forming metal lines including carbon

Multi-bit ferroelectric memory device and methods of forming the same

Methods of forming hafnium oxide

Top electrode in a strongly oxidizing environment

Semiconductor structures including liners and related methods

Capacitor with conductively doped Si-Ge alloy electrode

Method for stabilizing high pressure oxidation of a semiconductor device

Atomic layer deposition methods

DRAM constructions, memory arrays and semiconductor constructions

Semiconductor constructions comprising aluminum oxide and metal oxide dielectric materials

Methods of forming capacitors by ALD to prevent oxidation of the lower electrode

Method of forming a capacitor

System and method for inhibiting imprinting of capacitor structures of a memory

Methods of forming capacitors

Methods of depositing noble metals and methods of forming capacitor constructions

Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same

Method of forming capacitors containing tantalum

Method of processing internal surfaces of a chemical vapor deposition reactor

Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator

Multi-bit ferroelectric memory device and methods of forming the same

Electronic device, memory cell, and method of flowing electric current

INTEL CORP

Electrode materials and interface layers to minimize chalcogenide interface resistance

Electrode materials and interface layers to minimize chalcogenide interface resistance

ROUND ROCK RES LLC

Constructions comprising hafnium oxide and/or zirconium oxide