Inventor

SLATER JR DAVID B

US58 patents

⚠️ This page may combine multiple inventors who share the name “SLATER JR DAVID B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SLATER JR DAVID B

CREE INC

Nickel tin bonding system with barrier layer for semiconductor wafers and devices

Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures

External extraction light emitting diode based upon crystallographic faceted surfaces

Light emitting diodes including barrier layers/sublayers

Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor

Light emitting diodes including modifications for light extraction

Light emitting diodes including modifications for submount bonding

Light emitting diodes including pedestals

Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same

Cluster packaging of light emitting diodes

Vertical geometry ingan LED

Collets for bonding of light emitting diodes having shaped substrates

Methods of manufacturing light emitting diodes including barrier layers/sublayers

Light emitting diodes including transparent oxide layers

Methods of fabricating light emitting devices using mesa regions and passivation layers

Low temperature formation of backside ohmic contacts for vertical devices

Vertical geometry InGaN LED

Silicon carbide CMOS devices

LED fabrication via ion implant isolation

Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon

Robust group III light emitting diode for high reliability in standard packaging applications

Vertical geometry InGaN LED

Low temperature formation of backside ohmic contacts for vertical devices

LED fabrication via ion implant isolation

Graded dielectric layer

Low temperature formation of backside ohmic contacts for vertical devices

Systems for assembling components on submounts and methods therefor

Vertical geometry InGaN LED

External extraction light emitting diode based upon crystallographic faceted surfaces

Modified gold-tin system with increased melting temperature for wafer bonding

Systems for assembling components on submounts and methods therefor

LED fabrication via ion implant isolation

Pattern for improved visual inspection of semiconductor devices

Light emitting diodes including current spreading layer and barrier sublayers

High efficiency group III nitride LED with lenticular surface

Light emitting devices having current reducing structures

SLATER JR DAVID B

Light emitting diodes including two reflector layers

Localized annealing of metal-silicon carbide ohmic contacts and devices so formed

Nickel tin bonding system for semiconductor wafers and devices

Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor

RES TRIANGLE INST

Symmetric self-aligned processing

Method of manufacturing heterojunction transistors with self-aligned metal contacts

EMERSON DAVID TODD

Methods of forming light emitting devices having current reducing structures

Methods of forming light emitting devices having current reducing structures

CREE RESEARCH INC

Process for reducing defects in oxide layers on silicon carbide

CREE MICROWAVE INC

Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding

SANDIA CORP

CMOS-compatible InP/InGaAs digital photoreceiver

CREE MICROWAVE LLC

Flip-chip bonding of light emitting devices

DONOFRIO MATTHEW

Nickel tin bonding system with barrier layer for semiconductor wafers and devices

DOVERSPIKE KATHLEEN MARIE

Vertical geometry InGaN LED