Inventor
LANG CHI-I
US98 patents
⚠️ This page may combine multiple inventors who share the name “LANG CHI-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NOVELLUS SYSTEMS INC
13 patentsUS7915139B1Mar 29, 2011
CVD flowable gap fill
NOVELLUS SYSTEMS INC807 citations99
US7888233B1Feb 15, 2011
Flowable film dielectric gap fill process
NOVELLUS SYSTEMS INC572 citations99
US7582555B1Sep 1, 2009
CVD flowable gap fill
NOVELLUS SYSTEMS INC605 citations99
US7524735B1Apr 28, 2009
Flowable film dielectric gap fill process
NOVELLUS SYSTEMS INC166 citations99
US7514375B1Apr 7, 2009
Pulsed bias having high pulse frequency for filling gaps with dielectric material
NOVELLUS SYSTEMS INC559 citations99
US7211525B1May 1, 2007
Hydrogen treatment enhanced gap fill
NOVELLUS SYSTEMS INC540 citations96
US7435684B1Oct 14, 2008
Resolving of fluorine loading effect in the vacuum chamber
NOVELLUS SYSTEMS INC67 citations94
US8809161B2Aug 19, 2014
Flowable film dielectric gap fill process
NOVELLUS SYSTEMS INC21 citations93
US7482245B1Jan 27, 2009
Stress profile modulation in STI gap fill
NOVELLUS SYSTEMS INC22 citations93
US7727906B1Jun 1, 2010
H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift
NOVELLUS SYSTEMS INC23 citations92
US7344996B1Mar 18, 2008
Helium-based etch process in deposition-etch-deposition gap fill
NOVELLUS SYSTEMS INC22 citations92
US7381451B1Jun 3, 2008
Strain engineering—HDP thin film with tensile stress for FEOL and other applications
NOVELLUS SYSTEMS INC28 citations90
US7476621B1Jan 13, 2009
Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
NOVELLUS SYSTEMS INC15 citations84
INTERMOLECULAR INC
13 patentsUS8821985B2Sep 2, 2014
Method and apparatus for high-K gate performance improvement and combinatorial processing
INTERMOLECULAR INC342 citations98
US7972897B2Jul 5, 2011
Methods for forming resistive switching memory elements
INTERMOLECULAR INC75 citations98
US7629198B2Dec 8, 2009
Methods for forming nonvolatile memory elements with resistive-switching metal oxides
INTERMOLECULAR INC118 citations98
US7704789B2Apr 27, 2010
Methods for forming resistive switching memory elements
INTERMOLECULAR INC29 citations93
US7678607B2Mar 16, 2010
Methods for forming resistive switching memory elements
INTERMOLECULAR INC40 citations93
US7919446B1Apr 5, 2011
Post-CMP cleaning compositions and methods of using same
INTERMOLECULAR INC21 citations92
US7902064B1Mar 8, 2011
Method of forming a layer to enhance ALD nucleation on a substrate
INTERMOLECULAR INC37 citations92
US8821987B2Sep 2, 2014
Combinatorial processing using a remote plasma source
INTERMOLECULAR INC8 citations84
US7879710B2Feb 1, 2011
Substrate processing including a masking layer
INTERMOLECULAR INC6 citations74
US7658790B1Feb 9, 2010
Concentrated electroless solution for selective deposition of cobalt-based capping/barrier layers
INTERMOLECULAR INC7 citations74
US9245744B2Jan 26, 2016
Combinatorial plasma enhanced deposition and etch techniques
INTERMOLECULAR INC4 citations73
US9245793B2Jan 26, 2016
Plasma treatment of low-K surface to improve barrier deposition
INTERMOLECULAR INC5 citations71
US9245848B2Jan 26, 2016
Methods for coating a substrate with an amphiphilic compound
INTERMOLECULAR INC3 citations71
APPLIED MATERIALS INC
12 patentsUS6413583B1Jul 2, 2002
Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
APPLIED MATERIALS INC725 citations99
US6486082B1Nov 26, 2002
CVD plasma assisted lower dielectric constant sicoh film
APPLIED MATERIALS INC80 citations98
US6709715B1Mar 23, 2004
Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bonds
APPLIED MATERIALS INC109 citations97
US6086952AJul 11, 2000
Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer
APPLIED MATERIALS INC93 citations97
US6107184AAug 22, 2000
Nano-porous copolymer films having low dielectric constants
APPLIED MATERIALS INC52 citations96
US7745328B2Jun 29, 2010
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
APPLIED MATERIALS INC12 citations92
US6838393B2Jan 4, 2005
Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide
APPLIED MATERIALS INC24 citations92
US6943127B2Sep 13, 2005
CVD plasma assisted lower dielectric constant SICOH film
APPLIED MATERIALS INC6 citations74
US10954129B2Mar 23, 2021
Diamond-like carbon as mandrel
APPLIED MATERIALS INC3 citations73
US7465659B2Dec 16, 2008
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
APPLIED MATERIALS INC8 citations73
US7157384B2Jan 2, 2007
Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
APPLIED MATERIALS INC7 citations73
US6849562B2Feb 1, 2005
Method of depositing a low k dielectric barrier film for copper damascene application
APPLIED MATERIALS INC10 citations73
CHIANG TONY P
2 patentsKUMAR NITIN
2 patentsLANG CHI-I
1 patentGAURI VISHAL
1 patentSHANKER SUNIL
1 patentWANG YUN
1 patentCHIANG TONY
1 patentKALYANKAR NIKHIL D
1 patentLEE ALBERT
1 patentKONG BOB
1 patentShowing the top 50 of 98 patents by PatentIndex Score.