Inventor
PARK WEON-HO
KR24 patents
⚠️ This page may combine multiple inventors who share the name “PARK WEON-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS7323740B2Jan 29, 2008
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD58 citations97
US6660589B2Dec 9, 2003
Semiconductor devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD43 citations95
US6323517B1Nov 27, 2001
Non-volatile memory device with single-layered overwriting transistor
SAMSUNG ELECTRONICS CO LTD16 citations84
US7008847B2Mar 7, 2006
Semiconductor device having electrically erasable programmable read-only memory (EEPROM) and mask-ROM and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations83
US6555869B2Apr 29, 2003
Non-volatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations83
US7166887B2Jan 23, 2007
EEPROM device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations73
US6818509B2Nov 16, 2004
Methods of fabricating electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates
SAMSUNG ELECTRONICS CO LTD12 citations71
US7598139B2Oct 6, 2009
Single chip data processing device with embedded nonvolatile memory and method thereof
SAMSUNG ELECTRONICS CO LTD3 citations62
US7408219B2Aug 5, 2008
Nonvolatile semiconductor memory device
SAMSUNG ELECTRONICS CO LTD3 citations62
US7387933B2Jun 17, 2008
EEPROM device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US6967388B2Nov 22, 2005
Semiconductor devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US6197636B1Mar 6, 2001
Electrically erasable programmable read-only memory device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7352026B2Apr 1, 2008
EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations61
US6483145B1Nov 19, 2002
Electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gates
SAMSUNG ELECTRONICS CO LTD4 citations60
US7588983B2Sep 15, 2009
EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations59
US7852698B2Dec 14, 2010
Voltage supply device and nonvolatile memory device having the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7364973B2Apr 29, 2008
Method of manufacturing NOR-type mask ROM device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7253058B2Aug 7, 2007
Method of manufacturing NOR-type mask ROM device and semiconductor device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8039889B2Oct 18, 2011
Non-volatile memory devices including stepped source regions and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
US7429511B2Sep 30, 2008
Method of forming a tunneling insulating layer in nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations41
US7317223B2Jan 8, 2008
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations41