Inventor
YASUOKA HIDEKI
JP21 patents
⚠️ This page may combine multiple inventors who share the name “YASUOKA HIDEKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
11 patentsUS6780717B2Aug 24, 2004
Semiconductor integrated circuit device and method of manufacturing the same
RENESAS TECH CORP25 citations89
US7259054B2Aug 21, 2007
Method of manufacturing a semiconductor device that includes a process for forming a high breakdown voltage field effect transistor
RENESAS TECH CORP11 citations84
US7514749B2Apr 7, 2009
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP9 citations83
US7391083B2Jun 24, 2008
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP9 citations83
US7393737B2Jul 1, 2008
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP6 citations73
US7759763B2Jul 20, 2010
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP2 citations62
US6803644B2Oct 12, 2004
Semiconductor integrated circuit device and method of manufacturing the same
RENESAS TECH CORP5 citations62
US7224037B2May 29, 2007
Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs
RENESAS TECH CORP2 citations60
US7592669B2Sep 22, 2009
Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channel
RENESAS TECH CORP1 citations52
US7790554B2Sep 7, 2010
Method of manufacturing semiconductor integrated circuit device with high and low breakdown-voltage MISFETs
RENESAS TECH CORP0 citations49
US7541661B2Jun 2, 2009
Semiconductor integrated circuit device with high and low breakdown-voltage MISFETs
RENESAS TECH CORP0 citations49
HITACHI LTD
6 patentsUS4529456AJul 16, 1985
Method of forming bifets by forming isolation regions connected by diffusion in semiconductor substrate and epitaxial layer
HITACHI LTD41 citations90
US5256893AOct 26, 1993
Semiconductor integrated circuit device with power MOSFET incorporated
HITACHI LTD17 citations73
US5017996AMay 21, 1991
Semiconductor device and production method thereof
HITACHI LTD18 citations73
US4616405AOct 14, 1986
Semiconductor device and manufacturing method thereof
HITACHI LTD13 citations73
US4662057AMay 5, 1987
Method of manufacturing a semiconductor integrated circuit device
HITACHI LTD11 citations70
US7064090B2Jun 20, 2006
Method of manufacturing a semiconductor integrated circuit device
HITACHI LTD4 citations62