Inventor

OWYANG KING

US36 patents

⚠️ This page may combine multiple inventors who share the name “OWYANG KING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OWYANG KING

SILICONIX INC

Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation

Surface mount and flip chip technology for total integrated circuit isolation

Surface mount and flip chip technology for total integrated circuit isolation

Trenched DMOS transistor fabrication having thick termination region oxide

Trenched DMOS transistor having thick field oxide in termination region

Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof

Trenched DMOS transistor fabrication using six masks

Semiconductor die package including cup-shaped leadframe

Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof

Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs

Structure of power mosfets, including termination structures

Reverse battery protection device containing power MOSFET

Trenched DMOS transistor with channel block at cell trench corners

Low on-resistance power MOS technology

Structure and fabrication of power MOSFETs, including termination structures

Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same

Metal crossover in high voltage IC with graduated doping control

Low on-resistance power MOS technology

Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleys

Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleys

Semiconductor assembly with package using cup-shaped lead-frame

Trench MIS device having implanted drain-drift region and thick bottom oxide

GEN ELECTRIC

Integrated circuit incorporating low voltage and high voltage semiconductor devices

Semiconductor device with built-up low resistance contact

IGT and MOSFET devices having reduced channel width

Mosfet structure with substrate coupled source

Transistor having improved turn-off time and second breakdown characteristics with bi-level emitter structure

Method of making an integrated circuit incorporating low voltage and high voltage semiconductor devices

OWYANG KING

Complete power management system implemented in a single surface mount package

Complete power management system implemented in a single surface mount package

Complete power management system implemented in a single surface mount package

VISHAY SILICONIX

Semiconductor device with trench-like feed-throughs

Semiconductor die package including cup-shaped leadframe

LI JIAN

High current density power field effect transistor

PATTANAYAK DEVA

Semiconductor device with trench-like feed-throughs

CHANG MIKE

Semiconductor including cup-shaped leadframe packaging techniques