Inventor
POELZL MARTIN
AT98 patents
⚠️ This page may combine multiple inventors who share the name “POELZL MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
19 patentsUS6806533B2Oct 19, 2004
Semiconductor component with an increased breakdown voltage in the edge area
INFINEON TECHNOLOGIES AG83 citations98
US6690062B2Feb 10, 2004
Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
INFINEON TECHNOLOGIES AG119 citations98
US7005351B2Feb 28, 2006
Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
INFINEON TECHNOLOGIES AG113 citations97
US7091573B2Aug 15, 2006
Power transistor
INFINEON TECHNOLOGIES AG62 citations96
US7375029B2May 20, 2008
Method for fabricating contact holes in a semiconductor body and a semiconductor structure
INFINEON TECHNOLOGIES AG38 citations93
US7414286B2Aug 19, 2008
Trench transistor and method for fabricating a trench transistor
INFINEON TECHNOLOGIES AG18 citations92
US7250343B2Jul 31, 2007
Power transistor arrangement and method for fabricating it
INFINEON TECHNOLOGIES AG37 citations92
US7186618B2Mar 6, 2007
Power transistor arrangement and method for fabricating it
INFINEON TECHNOLOGIES AG32 citations92
US6891223B2May 10, 2005
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell
INFINEON TECHNOLOGIES AG52 citations92
US6927101B2Aug 9, 2005
Field-effect-controllable semiconductor component and method for fabricating the component
INFINEON TECHNOLOGIES AG8 citations74
US9306058B2Apr 5, 2016
Integrated circuit and method of manufacturing an integrated circuit
INFINEON TECHNOLOGIES AG3 citations73
US11302579B2Apr 12, 2022
Composite wafer, semiconductor device and electronic component
INFINEON TECHNOLOGIES AG1 citations72
US10672664B2Jun 2, 2020
Composite wafer, semiconductor device, electronic component and method of manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG2 citations72
US9356141B2May 31, 2016
Semiconductor device having peripheral trench structures
INFINEON TECHNOLOGIES AG4 citations72
US7816210B2Oct 19, 2010
Method for producing a trench transistor and trench transistor
INFINEON TECHNOLOGIES AG5 citations63
US7790550B2Sep 7, 2010
Trench transistor and method for fabricating a trench transistor
INFINEON TECHNOLOGIES AG4 citations63
US11848237B2Dec 19, 2023
Composite wafer, semiconductor device and electronic component
INFINEON TECHNOLOGIES AG0 citations62
US11552016B2Jan 10, 2023
Semiconductor device with metallization structure on opposite sides of a semiconductor portion
INFINEON TECHNOLOGIES AG0 citations62
US10971449B2Apr 6, 2021
Semiconductor device with metallization structure on opposite sides of a semiconductor portion
INFINEON TECHNOLOGIES AG0 citations62
INFINEON TECHNOLOGIES AUSTRIA AG
16 patentsUS10573742B1Feb 25, 2020
Oxygen inserted Si-layers in vertical trench power devices
INFINEON TECHNOLOGIES AUSTRIA AG11 citations85
US10580888B1Mar 3, 2020
Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices
INFINEON TECHNOLOGIES AUSTRIA AG7 citations84
US10510836B1Dec 17, 2019
Gate trench device with oxygen inserted si-layers
INFINEON TECHNOLOGIES AUSTRIA AG13 citations84
US9620636B2Apr 11, 2017
Semiconductor device with field electrode structures in a cell area and termination structures in an edge area
INFINEON TECHNOLOGIES AUSTRIA AG8 citations84
US9570553B2Feb 14, 2017
Semiconductor chip with integrated series resistances
INFINEON TECHNOLOGIES AUSTRIA AG6 citations84
US11031466B2Jun 8, 2021
Method of forming oxygen inserted Si-layers in power semiconductor devices
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US10861966B2Dec 8, 2020
Vertical trench power devices with oxygen inserted Si-layers
INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10741638B2Aug 11, 2020
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices
INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US10181511B2Jan 15, 2019
Semiconductor device and method of manufacturing a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US9728617B2Aug 8, 2017
Method for manufacturing a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US11031478B2Jun 8, 2021
Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture
INFINEON TECHNOLOGIES AUSTRIA AG2 citations72
US12087717B2Sep 10, 2024
Semiconductor package and methods of manufacturing a semiconductor package
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11699725B2Jul 11, 2023
Semiconductor device having an alignment layer with mask pits
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11545545B2Jan 3, 2023
Superjunction device with oxygen inserted Si-layers
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11081457B2Aug 3, 2021
Semiconductor package and methods of manufacturing a semiconductor package
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10903321B2Jan 26, 2021
Semiconductor device and method of manufacturing a semiconductor device using an alignment layer
INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
INFINEON TECHNOLOGIES AUSTRIA
7 patentsUS9355957B2May 31, 2016
Semiconductor device with self-aligned contact plugs
INFINEON TECHNOLOGIES AUSTRIA7 citations84
US9287404B2Mar 15, 2016
Semiconductor device and method of manufacturing a semiconductor device with lateral FET cells and field plates
INFINEON TECHNOLOGIES AUSTRIA7 citations84
US9231100B2Jan 5, 2016
Semiconductor device and method for manufacturing a semiconductor device
INFINEON TECHNOLOGIES AUSTRIA8 citations84
US8928066B2Jan 6, 2015
Integrated circuit with power and sense transistors
INFINEON TECHNOLOGIES AUSTRIA9 citations83
US7943955B2May 17, 2011
Monolithic semiconductor switches and method for manufacturing
INFINEON TECHNOLOGIES AUSTRIA13 citations83
US9029220B2May 12, 2015
Method of manufacturing a semiconductor device with self-aligned contact plugs and semiconductor device
INFINEON TECHNOLOGIES AUSTRIA4 citations73
US9070741B2Jun 30, 2015
Method of manufacturing a semiconductor device and a semiconductor workpiece
INFINEON TECHNOLOGIES AUSTRIA2 citations62
POELZL MARTIN
6 patentsUS8642459B2Feb 4, 2014
Method for forming a semiconductor device with an isolation region on a gate electrode
POELZL MARTIN4 citations73
US9082746B2Jul 14, 2015
Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component
POELZL MARTIN2 citations63
US8637367B2Jan 28, 2014
Method for producing an insulation layer between two electrodes
POELZL MARTIN2 citations63
US8633539B2Jan 21, 2014
Trench transistor and manufacturing method of the trench transistor
POELZL MARTIN3 citations63
US8313995B2Nov 20, 2012
Method for manufacturing a semiconductor device
POELZL MARTIN2 citations63
US8097916B2Jan 17, 2012
Method for insulating a semiconducting material in a trench from a substrate
POELZL MARTIN3 citations63
HAEBERLEN OLIVER
1 patentKRUMREY JOACHIM
1 patentShowing the top 50 of 98 patents by PatentIndex Score.