P

Inventor

POELZL MARTIN

AT98 patents
⚠️ This page may combine multiple inventors who share the name “POELZL MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

19 patents
US6806533B2Oct 19, 2004

Semiconductor component with an increased breakdown voltage in the edge area

INFINEON TECHNOLOGIES AG83 citations98
US6690062B2Feb 10, 2004

Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance

INFINEON TECHNOLOGIES AG119 citations98
US7005351B2Feb 28, 2006

Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration

INFINEON TECHNOLOGIES AG113 citations97
US7091573B2Aug 15, 2006

Power transistor

INFINEON TECHNOLOGIES AG62 citations96
US7375029B2May 20, 2008

Method for fabricating contact holes in a semiconductor body and a semiconductor structure

INFINEON TECHNOLOGIES AG38 citations93
US7414286B2Aug 19, 2008

Trench transistor and method for fabricating a trench transistor

INFINEON TECHNOLOGIES AG18 citations92
US7250343B2Jul 31, 2007

Power transistor arrangement and method for fabricating it

INFINEON TECHNOLOGIES AG37 citations92
US7186618B2Mar 6, 2007

Power transistor arrangement and method for fabricating it

INFINEON TECHNOLOGIES AG32 citations92
US6891223B2May 10, 2005

Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell

INFINEON TECHNOLOGIES AG52 citations92
US6927101B2Aug 9, 2005

Field-effect-controllable semiconductor component and method for fabricating the component

INFINEON TECHNOLOGIES AG8 citations74
US9306058B2Apr 5, 2016

Integrated circuit and method of manufacturing an integrated circuit

INFINEON TECHNOLOGIES AG3 citations73
US11302579B2Apr 12, 2022

Composite wafer, semiconductor device and electronic component

INFINEON TECHNOLOGIES AG1 citations72
US10672664B2Jun 2, 2020

Composite wafer, semiconductor device, electronic component and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG2 citations72
US9356141B2May 31, 2016

Semiconductor device having peripheral trench structures

INFINEON TECHNOLOGIES AG4 citations72
US7816210B2Oct 19, 2010

Method for producing a trench transistor and trench transistor

INFINEON TECHNOLOGIES AG5 citations63
US7790550B2Sep 7, 2010

Trench transistor and method for fabricating a trench transistor

INFINEON TECHNOLOGIES AG4 citations63
US11848237B2Dec 19, 2023

Composite wafer, semiconductor device and electronic component

INFINEON TECHNOLOGIES AG0 citations62
US11552016B2Jan 10, 2023

Semiconductor device with metallization structure on opposite sides of a semiconductor portion

INFINEON TECHNOLOGIES AG0 citations62
US10971449B2Apr 6, 2021

Semiconductor device with metallization structure on opposite sides of a semiconductor portion

INFINEON TECHNOLOGIES AG0 citations62

INFINEON TECHNOLOGIES AUSTRIA AG

16 patents
US10573742B1Feb 25, 2020

Oxygen inserted Si-layers in vertical trench power devices

INFINEON TECHNOLOGIES AUSTRIA AG11 citations85
US10580888B1Mar 3, 2020

Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices

INFINEON TECHNOLOGIES AUSTRIA AG7 citations84
US10510836B1Dec 17, 2019

Gate trench device with oxygen inserted si-layers

INFINEON TECHNOLOGIES AUSTRIA AG13 citations84
US9620636B2Apr 11, 2017

Semiconductor device with field electrode structures in a cell area and termination structures in an edge area

INFINEON TECHNOLOGIES AUSTRIA AG8 citations84
US9570553B2Feb 14, 2017

Semiconductor chip with integrated series resistances

INFINEON TECHNOLOGIES AUSTRIA AG6 citations84
US11031466B2Jun 8, 2021

Method of forming oxygen inserted Si-layers in power semiconductor devices

INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US10861966B2Dec 8, 2020

Vertical trench power devices with oxygen inserted Si-layers

INFINEON TECHNOLOGIES AUSTRIA AG3 citations73
US10741638B2Aug 11, 2020

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices

INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US10181511B2Jan 15, 2019

Semiconductor device and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG2 citations73
US9728617B2Aug 8, 2017

Method for manufacturing a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG4 citations73
US11031478B2Jun 8, 2021

Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture

INFINEON TECHNOLOGIES AUSTRIA AG2 citations72
US12087717B2Sep 10, 2024

Semiconductor package and methods of manufacturing a semiconductor package

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11699725B2Jul 11, 2023

Semiconductor device having an alignment layer with mask pits

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11545545B2Jan 3, 2023

Superjunction device with oxygen inserted Si-layers

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US11081457B2Aug 3, 2021

Semiconductor package and methods of manufacturing a semiconductor package

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62
US10903321B2Jan 26, 2021

Semiconductor device and method of manufacturing a semiconductor device using an alignment layer

INFINEON TECHNOLOGIES AUSTRIA AG0 citations62

INFINEON TECHNOLOGIES AUSTRIA

7 patents

POELZL MARTIN

6 patents

HAEBERLEN OLIVER

1 patent

KRUMREY JOACHIM

1 patent

Showing the top 50 of 98 patents by PatentIndex Score.