Inventor

ZUNDEL MARKUS

DE160 patents

⚠️ This page may combine multiple inventors who share the name “ZUNDEL MARKUS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZUNDEL MARKUS

INFINEON TECHNOLOGIES AG

Semiconductor component with an increased breakdown voltage in the edge area

Trench power semiconductor

Power trench transistor

Trench transistor and method for fabricating a trench transistor

Semiconductor device with temperature sensor

Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

MOS transistor device

MOS transistor device with a locally maximum concentration region between the source region and the drain region

Semiconductor component arrangement comprising a trench transistor

Method for dividing a semiconductor substrate and a method for producing a semiconductor circuit arrangement

Semiconductor component including plural trench transistors with intermediate mesa regions

Field-effect power transistor

Semiconductor component, trench structure transistor, trench MOSFET, IGBT, and field-plate transistor

Method of producing a semiconductor component arrangement comprising a trench transistor

Method for producing a controllable semiconductor component having trenches with different widths and depths

Semiconductor device, integrated circuit and method of forming a semiconductor device

Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidation

Method for producing a semiconductor component

Semiconductor device with multi-branch gate contact structure

Semiconductor device including an integrated resistor

Gated diode in a press-fit housing and an alternator assembly having a gated diode arranged in a load path

Semiconductor device including transistor device

Transistor device with field-electrode

INFINEON TECHNOLOGIES AUSTRIA

Method for producing an integrated circuit with a trench transistor structure

Method for producing a connection electrode for two semiconductor zones arranged one above another

Method for producing a semiconductor component

MOS field plate trench transistor device

Electronic device with connecting structure

Semiconductor component with a drift region and a drift control region

INFINEON TECHNOLOGIES AUSTRIA AG

Transistor having at least one transistor cell with a field electrode

Power semiconductor having a lightly doped drift and buffer layer

Transistor with field electrode

Method of manufacturing a termination arrangement for a vertical MOSFET

Semiconductor device

ZUNDEL MARKUS

Method for producing a semiconductor component arrangement comprising a trench transistor

Semiconductor device

Field effect trench transistor having active trenches

HIRLER FRANZ

Semiconductor including lateral HEMT

Anchoring structure and intermeshing structure

Semiconductor device including charged structure and methods for manufacturing a semiconductor device

SEDLMAIER STEFAN

Stress-reduced field-effect semiconductor device and method for forming therefor

MEISER ANDREAS

Method for producing a controllable semiconductor component

PFIRSCH FRANK

Semiconductor component with a drift region and a drift control region

THIELE STEFFEN

Current sense transistor with embedding of sense transistor cells

DIBRA DONALD

System and method for constructing shielded seebeck temperature difference sensor

MEISER ANDREAS PETER

Vertical transistor component

NELLE PETER

Semiconductor device including a stress relief layer and method of manufacturing

AHLERS DIRK

Gated diode, battery charging assembly and generator assembly

KRISCHKE NORBERT

Transistor

WOOD ANDREW

Termination arrangement for vertical MOSFET