Inventor
MAZEN FRÉDÉRIC
FR10 patents
⚠️ This page may combine multiple inventors who share the name “MAZEN FRÉDÉRIC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
5 patentsUS9698289B2Jul 4, 2017
Detachment of a self-supporting layer of silicon <100>
COMMISSARIAT ENERGIE ATOMIQUE5 citations67
US11769687B2Sep 26, 2023
Method for layer transfer with localised reduction of a capacity to initiate a fracture
COMMISSARIAT ENERGIE ATOMIQUE0 citations60
US11195711B2Dec 7, 2021
Healing method before transfer of a semiconducting layer
COMMISSARIAT ENERGIE ATOMIQUE1 citations59
US9201023B2Dec 1, 2015
System for measuring a spacing zone in a substrate
COMMISSARIAT ENERGIE ATOMIQUE2 citations54
US11587826B2Feb 21, 2023
Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted species
COMMISSARIAT ENERGIE ATOMIQUE0 citations53
SOITEC SILICON ON INSULATOR
4 patentsUS12002697B2Jun 4, 2024
Method for detecting the splitting of a substrate weakened by implanting atomic species
SOITEC SILICON ON INSULATOR0 citations60
US11670540B2Jun 6, 2023
Substrates including useful layers
SOITEC SILICON ON INSULATOR0 citations60
US11189519B2Nov 30, 2021
Masking a zone at the edge of a donor substrate during an ion implantation step
SOITEC SILICON ON INSULATOR0 citations52
US12469743B2Nov 11, 2025
Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portion
SOITEC SILICON ON INSULATOR0 citations44