Inventor
LAZOVSKY DAVID E
US38 patents
⚠️ This page may combine multiple inventors who share the name “LAZOVSKY DAVID E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
24 patentsUS7309658B2Dec 18, 2007
Molecular self-assembly in substrate processing
INTERMOLECULAR INC97 citations99
US7544574B2Jun 9, 2009
Methods for discretized processing of regions of a substrate
INTERMOLECULAR INC38 citations96
US7902063B2Mar 8, 2011
Methods for discretized formation of masking and capping layers on a substrate
INTERMOLECULAR INC15 citations93
US9362231B2Jun 7, 2016
Molecular self-assembly in substrate processing
INTERMOLECULAR INC9 citations92
US8709943B2Apr 29, 2014
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
INTERMOLECULAR INC4 citations84
US7871928B2Jan 18, 2011
Methods for discretized processing of regions of a substrate
INTERMOLECULAR INC8 citations84
US7749881B2Jul 6, 2010
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
INTERMOLECULAR INC11 citations84
US8372759B2Feb 12, 2013
Molecular self-assembly in substrate processing
INTERMOLECULAR INC4 citations74
US8030772B2Oct 4, 2011
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
INTERMOLECULAR INC6 citations74
US7972972B2Jul 5, 2011
Molecular self-assembly in substrate processing
INTERMOLECULAR INC4 citations74
US8995166B2Mar 31, 2015
Multi-level memory array having resistive elements for multi-bit data storage
INTERMOLECULAR INC5 citations73
US9368400B2Jun 14, 2016
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
INTERMOLECULAR INC1 citations63
US9331279B2May 3, 2016
Creating an embedded ReRAM memory from a high-k metal gate transistor structure
INTERMOLECULAR INC1 citations63
US8975180B2Mar 10, 2015
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
INTERMOLECULAR INC2 citations63
US8815753B2Aug 26, 2014
Molecular self-assembly in substrate processing
INTERMOLECULAR INC1 citations63
US8343866B2Jan 1, 2013
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
INTERMOLECULAR INC1 citations63
US8039383B2Oct 18, 2011
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric regions
INTERMOLECULAR INC3 citations63
US9275727B2Mar 1, 2016
Multi-level memory array having resistive elements for multi-bit data storage
INTERMOLECULAR INC1 citations52
US9275954B2Mar 1, 2016
Molecular self-assembly in substrate processing
INTERMOLECULAR INC0 citations52
US9076716B2Jul 7, 2015
Methods for discretized processing and process sequence integration of regions of a substrate
INTERMOLECULAR INC0 citations52
US9054032B2Jun 9, 2015
Creating an embedded ReRAM memory from a high-k metal gate transistor structure
INTERMOLECULAR INC0 citations52
US8610121B2Dec 17, 2013
Methods for discretized processing and process sequence integration of regions of a substrate
INTERMOLECULAR INC0 citations52
US8575036B2Nov 5, 2013
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
INTERMOLECULAR INC0 citations52
US8367587B2Feb 5, 2013
Methods for discretized processing and process sequence integration of regions of a substrate
INTERMOLECULAR INC0 citations52
CHIANG TONY P
9 patentsUS8163631B2Apr 24, 2012
Methods for discretized processing and process sequence integration of regions of a substrate
CHIANG TONY P15 citations92
US8084400B2Dec 27, 2011
Methods for discretized processing and process sequence integration of regions of a substrate
CHIANG TONY P16 citations92
US8058154B2Nov 15, 2011
Methods for discretized processing and process sequence integration of regions of a substrate
CHIANG TONY P4 citations74
US8697606B2Apr 15, 2014
Methods for discretized processing and process sequence integration of regions of a substrate
CHIANG TONY P2 citations63
US8836123B2Sep 16, 2014
Methods for discretized formation of masking and capping layers on a substrate
CHIANG TONY P0 citations52
US8776717B2Jul 15, 2014
Systems for discretized processing of regions of a substrate
CHIANG TONY P0 citations52
US8389445B2Mar 5, 2013
Methods for discretized processing and process sequence integration of regions of a substrate
CHIANG TONY P0 citations52
US8067340B2Nov 29, 2011
Methods for discretized processing and process sequence integration of regions of a substrate
CHIANG TONY P0 citations52
US8882914B2Nov 11, 2014
Processing substrates using site-isolated processing
CHIANG TONY P0 citations42
LAZOVSKY DAVID E
5 patentsUS7390739B2Jun 24, 2008
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
LAZOVSKY DAVID E18 citations92
US8193090B2Jun 5, 2012
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
LAZOVSKY DAVID E4 citations73
US8883633B2Nov 11, 2014
Molecular self-assembly in substrate processing
LAZOVSKY DAVID E2 citations62
US8586485B2Nov 19, 2013
Molecular self-assembly in substrate processing
LAZOVSKY DAVID E1 citations62
US8461044B2Jun 11, 2013
Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
LAZOVSKY DAVID E2 citations62