Inventor
BANG SUK-CHUL
KR16 patents
⚠️ This page may combine multiple inventors who share the name “BANG SUK-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
5 patentsUS8860221B2Oct 14, 2014
Electrode connecting structures containing copper
SAMSUNG ELECTRONICS CO LTD5 citations73
US7268029B2Sep 11, 2007
Method of fabricating CMOS transistor that prevents gate thinning
SAMSUNG ELECTRONICS CO LTD3 citations60
US9490216B2Nov 8, 2016
Semiconductor device and semiconductor package
SAMSUNG ELECTRONICS CO LTD0 citations52
US7682450B2Mar 23, 2010
Stacked semiconductor device and related method
SAMSUNG ELECTRONICS CO LTD0 citations51
US7585757B2Sep 8, 2009
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations36
PARK JAE-HWA
4 patentsUS9691684B2Jun 27, 2017
Integrated circuit device including through-silicon via structure and decoupling capacitor and method of manufacturing the same
PARK JAE-HWA21 citations93
US9379042B2Jun 28, 2016
Integrated circuit devices having through silicon via structures and methods of manufacturing the same
PARK JAE-HWA15 citations83
US9214411B2Dec 15, 2015
Integrated circuit devices including a through-silicon via structure and methods of fabricating the same
PARK JAE-HWA12 citations83
US9142490B2Sep 22, 2015
Integrated circuit device having through-silicon-via structure and method of manufacturing the integrated circuit device
PARK JAE-HWA11 citations83
PARK BYUNG-LYUL
4 patentsUS8076234B1Dec 13, 2011
Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structure
PARK BYUNG-LYUL40 citations92
US9018768B2Apr 28, 2015
Integrated circuit having through silicon via structure with minimized deterioration
PARK BYUNG-LYUL10 citations83
US8592310B2Nov 26, 2013
Methods of manufacturing a semiconductor device
PARK BYUNG-LYUL18 citations83
US8847399B2Sep 30, 2014
Semiconductor device and method of fabricating the same
PARK BYUNG-LYUL2 citations62