Inventor
LAVEN JOHANNES
DE16 patents
⚠️ This page may combine multiple inventors who share the name “LAVEN JOHANNES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
15 patentsUS9917186B2Mar 13, 2018
Semiconductor device with control structure including buried portions and method of manufacturing
INFINEON TECHNOLOGIES AG9 citations84
US9613805B1Apr 4, 2017
Method for forming a semiconductor device
INFINEON TECHNOLOGIES AG9 citations84
US9105487B2Aug 11, 2015
Super junction semiconductor device
INFINEON TECHNOLOGIES AG6 citations84
US9054035B2Jun 9, 2015
Increasing the doping efficiency during proton irradiation
INFINEON TECHNOLOGIES AG8 citations84
US11121242B2Sep 14, 2021
Method of operating a semiconductor device having a desaturation channel structure
INFINEON TECHNOLOGIES AG0 citations62
US10529838B2Jan 7, 2020
Semiconductor device having a variable carbon concentration
INFINEON TECHNOLOGIES AG1 citations62
US9748102B2Aug 29, 2017
Semiconductor chip arrangement and method thereof
INFINEON TECHNOLOGIES AG1 citations62
US9496351B2Nov 15, 2016
Semiconductor chip arrangement
INFINEON TECHNOLOGIES AG2 citations62
US10312258B2Jun 4, 2019
Semiconductor device with buried cavities and dielectric support structures
INFINEON TECHNOLOGIES AG0 citations52
US9536740B2Jan 3, 2017
Increasing the doping efficiency during proton irradiation
INFINEON TECHNOLOGIES AG0 citations52
US9972689B2May 15, 2018
Semiconductor device having a surface with ripples
INFINEON TECHNOLOGIES AG0 citations51
US9263271B2Feb 16, 2016
Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG0 citations51
US8895453B2Nov 25, 2014
Semiconductor device with an insulation layer having a varying thickness
INFINEON TECHNOLOGIES AG0 citations51
US9754787B2Sep 5, 2017
Method for treating a semiconductor wafer
INFINEON TECHNOLOGIES AG1 citations50
US9847229B2Dec 19, 2017
Method for forming a semiconductor device and semiconductor device
INFINEON TECHNOLOGIES AG0 citations41