Inventor

SCHUSTEREDER WERNER

AT58 patents

⚠️ This page may combine multiple inventors who share the name “SCHUSTEREDER WERNER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SCHUSTEREDER WERNER

INFINEON TECHNOLOGIES AG

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

Method for forming a semiconductor device

Super junction semiconductor device

Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure

Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors

Method for forming a semiconductor device and a semiconductor device

Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors

Semiconductor device with a semiconductor body containing hydrogen-related donors

Ion implantation method, ion implantation apparatus and semiconductor device

Transistor with field electrodes and improved avalanche breakdown behavior

Methods for forming a semiconductor device and a semiconductor device

Methods for forming a semiconductor device using tilted reactive ion beam

Method of manufacturing semiconductor devices including generating and annealing radiation-induced crystal defects

Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device

Silicon carbide device with compensation region and method of manufacturing

Apparatus and method for neutron transmutation doping of semiconductor wafers

Semiconductor devices with steep junctions and methods of manufacturing thereof

Semiconductor device having a variable carbon concentration

Semiconductor device containing oxygen-related thermal donors

Method of manufacturing a semiconductor device

Methods for processing a semiconductor substrate

Method of manufacturing a semiconductor device by using ion beam technique

Method of reducing a sheet resistance in an electronic device, and an electronic device

Silicon carbide device with metallic interface layers and method of manufacturing

Method of manufacturing a metal silicide layer above a silicon carbide substrate, and semiconductor device comprising a metal silicide layer

Silicon carbide device with compensation layer and method of manufacturing

Vertical transistor with trench gate insulator having varying thickness

Apparatus and method for ion implantation

Semiconductor device having a device doping region of an electrical device arrangement

SiC-based superjunction semiconductor device

Semiconductor devices with steep junctions and methods of manufacturing thereof

Apparatus and method for neutron transmutation doping of semiconductor wafers

Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures

Method for implanting ions into a semiconductor substrate and an implantation system

Semiconductor device and methods for forming a semiconductor device

SiC-based superjunction semiconductor device

Ion implantation apparatus with ion beam directing unit

Method of manufacturing semiconductor devices using light ion implantation and semiconductor device

Method for producing a semiconductor

Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing

Method for producing a semiconductor

INFINEON TECHNOLOGIES AUSTRIA AG

Semiconductor device and method for manufacturing a semiconductor device

Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor device

Laser thermal annealing of deep doped region using structured antireflective coating

Method for producing a superjunction device

Method for producing a superjunction device

Method for manufacturing a semiconductor device

Method for producing a superjunction device

SCHULZE HANS-JOACHIM

Method of manufacturing semiconductor devices using ion implantation

NEIDHART THOMAS

Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body