Inventor
KNOEFLER ROMAN
AT26 patents
⚠️ This page may combine multiple inventors who share the name “KNOEFLER ROMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS7488670B2Feb 10, 2009
Direct channel stress
INFINEON TECHNOLOGIES AG16 citations92
US9105487B2Aug 11, 2015
Super junction semiconductor device
INFINEON TECHNOLOGIES AG6 citations84
US7985676B2Jul 26, 2011
Method of making a contact in a semiconductor device
INFINEON TECHNOLOGIES AG10 citations83
US7800182B2Sep 21, 2010
Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same
INFINEON TECHNOLOGIES AG6 citations73
US7642158B2Jan 5, 2010
Semiconductor memory device and method of production
INFINEON TECHNOLOGIES AG6 citations62
US7217619B2May 15, 2007
Method for fabricating memory components
INFINEON TECHNOLOGIES AG5 citations62
US7678704B2Mar 16, 2010
Method of making a contact in a semiconductor device
INFINEON TECHNOLOGIES AG5 citations61
US7858964B2Dec 28, 2010
Semiconductor device formed in a recrystallized layer
INFINEON TECHNOLOGIES AG0 citations52
US7282451B2Oct 16, 2007
Methods of forming integrated circuit devices having metal interconnect layers therein
INFINEON TECHNOLOGIES AG1 citations51
US7026220B1Apr 11, 2006
Method for production of charge-trapping memory devices
INFINEON TECHNOLOGIES AG0 citations37
QIMONDA AG
4 patentsUS7915667B2Mar 29, 2011
Integrated circuits having a contact region and methods for manufacturing the same
QIMONDA AG491 citations97
US7875516B2Jan 25, 2011
Integrated circuit including a first gate stack and a second gate stack and a method of manufacturing
QIMONDA AG12 citations84
US7462038B2Dec 9, 2008
Interconnection structure and method of manufacturing the same
QIMONDA AG18 citations83
US8018070B2Sep 13, 2011
Semiconductor device, method for manufacturing semiconductor devices and mask systems used in the manufacturing of semiconductor devices
QIMONDA AG4 citations56
INFINEON TECHNOLOGIES AUSTRIA
3 patentsUS9166005B2Oct 20, 2015
Semiconductor device with charge compensation structure
INFINEON TECHNOLOGIES AUSTRIA8 citations84
US9178016B2Nov 3, 2015
Charge protection for III-nitride devices
INFINEON TECHNOLOGIES AUSTRIA4 citations72
US9293528B2Mar 22, 2016
Field-effect semiconductor device and manufacturing therefor
INFINEON TECHNOLOGIES AUSTRIA2 citations63
WEBER HANS
3 patentsUS9112053B2Aug 18, 2015
Method for producing a semiconductor device including a dielectric layer
WEBER HANS2 citations61
US8288230B2Oct 16, 2012
Method for producing a gate electrode structure
WEBER HANS2 citations61
US8399325B2Mar 19, 2013
Method for producing an electrode structure
WEBER HANS0 citations40