Inventor
BEASOR SCOTT
US29 patents
Patents
29 patentsUS9812453B1Nov 7, 2017
Self-aligned sacrificial epitaxial capping for trench silicide
GLOBALFOUNDRIES INC22 citations93
US10373877B1Aug 6, 2019
Methods of forming source/drain contact structures on integrated circuit products
GLOBALFOUNDRIES INC18 citations85
US10326002B1Jun 18, 2019
Self-aligned gate contact and cross-coupling contact formation
GLOBALFOUNDRIES INC11 citations84
US9984933B1May 29, 2018
Silicon liner for STI CMP stop in FinFET
GLOBALFOUNDRIES INC7 citations82
US9397004B2Jul 19, 2016
Methods for fabricating FinFET integrated circuits with simultaneous formation of local contact openings
GLOBALFOUNDRIES INC10 citations82
US10879180B2Dec 29, 2020
FinFET with etch-selective spacer and self-aligned contact capping layer
GLOBALFOUNDRIES INC2 citations73
US10629694B1Apr 21, 2020
Gate contact and cross-coupling contact formation
GLOBALFOUNDRIES INC2 citations73
US10586736B2Mar 10, 2020
Hybrid fin cut with improved fin profiles
GLOBALFOUNDRIES INC4 citations73
US10580701B1Mar 3, 2020
Methods of making a self-aligned gate contact structure and source/drain metallization structures on integrated circuit products
GLOBALFOUNDRIES INC2 citations73
US10475890B2Nov 12, 2019
Scaled memory structures or other logic devices with middle of the line cuts
GLOBALFOUNDRIES INC2 citations73
US10403742B2Sep 3, 2019
Field-effect transistors with fins formed by a damascene-like process
GLOBALFOUNDRIES INC2 citations73
US9330971B2May 3, 2016
Method for fabricating integrated circuits including contacts for metal resistors
GLOBALFOUNDRIES INC6 citations73
US10707175B2Jul 7, 2020
Asymmetric overlay mark for overlay measurement
GLOBALFOUNDRIES INC3 citations72
US10049944B2Aug 14, 2018
Method of manufacturing selective nanostructures into finFET process flow
GLOBALFOUNDRIES INC4 citations72
US9419082B2Aug 16, 2016
Source/drain profile engineering for enhanced p-MOSFET
GLOBALFOUNDRIES INC4 citations72
US10361289B1Jul 23, 2019
Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same
GLOBALFOUNDRIES INC2 citations71
US10043708B2Aug 7, 2018
Structure and method for capping cobalt contacts
GLOBALFOUNDRIES INC4 citations71
US10872979B2Dec 22, 2020
Spacer structures for a transistor device
GLOBALFOUNDRIES INC1 citations62
US10818659B2Oct 27, 2020
FinFET having upper spacers adjacent gate and source/drain contacts
GLOBALFOUNDRIES INC1 citations62
US10804379B2Oct 13, 2020
FinFET device and method of manufacturing
GLOBALFOUNDRIES INC1 citations62
US10629739B2Apr 21, 2020
Methods of forming spacers adjacent gate structures of a transistor device
GLOBALFOUNDRIES INC1 citations62
US10741556B2Aug 11, 2020
Self-aligned sacrificial epitaxial capping for trench silicide
GLOBALFOUNDRIES INC1 citations61
US10832966B2Nov 10, 2020
Methods and structures for a gate cut
GLOBALFOUNDRIES INC1 citations60
US10832965B2Nov 10, 2020
Fin reveal forming STI regions having convex shape between fins
GLOBALFOUNDRIES INC1 citations60
US10832839B1Nov 10, 2020
Metal resistors with a non-planar configuration
GLOBALFOUNDRIES INC0 citations52
US10763176B2Sep 1, 2020
Transistor with a gate structure comprising a tapered upper surface
GLOBALFOUNDRIES INC0 citations52
US10522644B1Dec 31, 2019
Different upper and lower spacers for contact
GLOBALFOUNDRIES INC0 citations52
US8962485B2Feb 24, 2015
Reusing active area mask for trench transfer exposure
GLOBALFOUNDRIES INC1 citations46
US10636890B2Apr 28, 2020
Chamfered replacement gate structures
GLOBALFOUNDRIES INC0 citations41