Inventor

OGIWARA RYU

JP74 patents

⚠️ This page may combine multiple inventors who share the name “OGIWARA RYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OGIWARA RYU

TOSHIBA KK

Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit

Power supply circuit

Semiconductor memory device having memory cells to store cell data and reference data

Semiconductor memory device for reading charges stored in capacitor in memory cell and data reading method thereof

Ferroelectric memory

Semiconductor memory device for reading charges stored in capacitor in memory cell and data reading method thereof

NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines

NAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit lines

Semiconductor memory device for suppressing noises occurring on bit and word lines

Nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

Voltage generating circuit

Reference voltage generator circuit

Phase-change memory device using chalcogenide compound as the material of memory cells

Semiconductor integrated circuit device

Ferroelectric random access memory with isolation transistors coupled between a sense amplifier and an equalization circuit

Voltage step-down circuit

Chain ferroelectric random access memory (CFRAM) having an intrinsic transistor connected in parallel with a ferroelectric capacitor

Ferroelectric memory with an intrinsic access transistor coupled to a capacitor

Series connected TC unit type ferroelectric RAM and test method thereof

Semiconductor integrated circuit device and operation method therefor

Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pair

Semiconductor storage device

Semiconductor storage device

Semiconductor storage device having resistance-change storage elements

Semiconductor memory device

Reference voltage generation circuit

Reference voltage generating circuit for use of integrated circuit

Power supply circuit using insulated-gate field-effect transistors

Voltage generating circuit

Semiconductor device including an internal voltage generation circuit and a first test circuit

Voltage generation circuit provided in a semiconductor integrated device

Semiconductor memory device

Reference voltage generation circuit

Temperature sensing circuit, voltage generation circuit, and semiconductor storage device

Power supply voltage control circuit

Ferroelectric memory to be tested by applying disturbance voltage to a plurality of ferroelectric capacitors at once in direction to weaken polarization, and method of testing the same

Semiconductor storage device

Ferroelectric memory and method of testing the same

KIOXIA CORP

Memory device and method of manufacturing memory device

Memory device

Memory device and method of manufacturing memory device

Memory device

INFINEON TECHNOLOGIES AG

Semiconductor device having semiconductor memory with sense amplifier

Semiconductor memory

Semiconductor device having semiconductor memory with sense amplifier

TOSHIBA MEMORY CORP

Semiconductor memory device including variable resistance element

Multi-layer resistive memory device with variable resistance elements

ITAGAKI KIYOTARO

Nonvolatile semiconductor memory device

OGIWARA RYU

Three dimensional NAND type memory device having selective charge pump activation to minimize noise