Inventor
SATO ARTHUR
US18 patents
⚠️ This page may combine multiple inventors who share the name “SATO ARTHUR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LAM RES CORP
10 patentsUS9620337B2Apr 11, 2017
Determining a malfunctioning device in a plasma system
LAM RES CORP29 citations94
US10134570B2Nov 20, 2018
Radiofrequency adjustment for instability management in semiconductor processing
LAM RES CORP7 citations83
US9059101B2Jun 16, 2015
Radiofrequency adjustment for instability management in semiconductor processing
LAM RES CORP8 citations83
US10679825B2Jun 9, 2020
Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate
LAM RES CORP3 citations73
US10319570B2Jun 11, 2019
Determining a malfunctioning device in a plasma system
LAM RES CORP5 citations73
US9997381B2Jun 12, 2018
Hybrid edge ring for plasma wafer processing
LAM RES CORP3 citations73
US9083182B2Jul 14, 2015
Bypass capacitors for high voltage bias power in the mid frequency RF range
LAM RES CORP5 citations72
US9412670B2Aug 9, 2016
System, method and apparatus for RF power compensation in plasma etch chamber
LAM RES CORP2 citations57
US10438775B2Oct 8, 2019
Methods for automatically determining capacitor values and systems thereof
LAM RES CORP0 citations51
US9484214B2Nov 1, 2016
Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
LAM RES CORP0 citations51
APPLIED MATERIALS INC
6 patentsUS5919382AJul 6, 1999
Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
APPLIED MATERIALS INC99 citations97
US6352049B1Mar 5, 2002
Plasma assisted processing chamber with separate control of species density
APPLIED MATERIALS INC498 citations96
US6356097B1Mar 12, 2002
Capacitive probe for in situ measurement of wafer DC bias voltage
APPLIED MATERIALS INC33 citations92
US5667701ASep 16, 1997
Method of measuring the amount of capacitive coupling of RF power in an inductively coupled plasma
APPLIED MATERIALS INC22 citations92
US6447637B1Sep 10, 2002
Process chamber having a voltage distribution electrode
APPLIED MATERIALS INC22 citations90
US5942889AAug 24, 1999
Capacitive probe for in situ measurement of wafer DC bias voltage
APPLIED MATERIALS INC14 citations73