Inventor
PINER EDWIN L
US25 patents
⚠️ This page may combine multiple inventors who share the name “PINER EDWIN L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NITRONEX CORP
9 patentsUS6649287B2Nov 18, 2003
Gallium nitride materials and methods
NITRONEX CORP248 citations99
US6617060B2Sep 9, 2003
Gallium nitride materials and methods
NITRONEX CORP317 citations99
US7361946B2Apr 22, 2008
Semiconductor device-based sensors
NITRONEX CORP116 citations97
US7247889B2Jul 24, 2007
III-nitride material structures including silicon substrates
NITRONEX CORP83 citations97
US6611002B2Aug 26, 2003
Gallium nitride material devices and methods including backside vias
NITRONEX CORP176 citations97
US7365374B2Apr 29, 2008
Gallium nitride material structures including substrates and methods associated with the same
NITRONEX CORP52 citations96
US7135720B2Nov 14, 2006
Gallium nitride material transistors and methods associated with the same
NITRONEX CORP50 citations94
US7791106B2Sep 7, 2010
Gallium nitride material structures including substrates and methods associated with the same
NITRONEX CORP17 citations92
US7687827B2Mar 30, 2010
III-nitride materials including low dislocation densities and methods associated with the same
NITRONEX CORP21 citations92
INT RECTIFIER CORP
7 patentsUS8592862B2Nov 26, 2013
Gallium nitride semiconductor structures with compositionally-graded transition layer
INT RECTIFIER CORP18 citations96
US8937335B2Jan 20, 2015
Gallium nitride devices with aluminum nitride intermediate layer
INT RECTIFIER CORP12 citations92
US8928035B2Jan 6, 2015
Gallium nitride devices with gallium nitride alloy intermediate layer
INT RECTIFIER CORP9 citations92
US8928034B2Jan 6, 2015
Gallium nitride devices with aluminum nitride alloy intermediate layer
INT RECTIFIER CORP11 citations92
US8344417B2Jan 1, 2013
Gallium nitride semiconductor structures with compositionally-graded transition layer
INT RECTIFIER CORP16 citations92
US7994540B2Aug 9, 2011
Gallium nitride material transistors and methods associated with the same
INT RECTIFIER CORP1 citations61
US8368117B2Feb 5, 2013
III-nitride materials including low dislocation densities and methods associated with the same
INT RECTIFIER CORP0 citations52