Inventor
CHAN BOON TEIK
BE48 patents
⚠️ This page may combine multiple inventors who share the name “CHAN BOON TEIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IMEC VZW
45 patentsUS9391141B2Jul 12, 2016
Method for producing fin structures of a semiconductor device in a substrate
IMEC VZW11 citations81
US10079145B2Sep 18, 2018
Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method
IMEC VZW4 citations73
US11107812B2Aug 31, 2021
Method of fabricating stacked semiconductor device
IMEC VZW2 citations71
US10490442B2Nov 26, 2019
Method for blocking a trench portion
IMEC VZW2 citations71
US9899220B2Feb 20, 2018
Method for patterning a substrate involving directed self-assembly
IMEC VZW2 citations71
US10090393B2Oct 2, 2018
Method for forming a field effect transistor device having an electrical contact
IMEC VZW2 citations70
US11545401B2Jan 3, 2023
Isolated semiconductor layer stacks for a semiconductor device
IMEC VZW0 citations62
US11488826B2Nov 1, 2022
Self-aligned layer patterning
IMEC VZW0 citations62
US11335597B2May 17, 2022
Method for forming a buried metal line
IMEC VZW1 citations62
US11862452B2Jan 2, 2024
Contact isolation in semiconductor devices
IMEC VZW0 citations60
US11824122B2Nov 21, 2023
Method for filling a space in a semiconductor
IMEC VZW0 citations60
US11638391B2Apr 25, 2023
Method for processing a semiconductor device with two closely spaced gates
IMEC VZW0 citations57
US11527431B2Dec 13, 2022
Methods of semiconductor device processing
IMEC VZW0 citations54
US11056376B2Jul 6, 2021
Removing an organic sacrificial material from a two-dimensional material
IMEC VZW0 citations53
US12484289B2Nov 25, 2025
Method for forming a stacked transistor device
IMEC VZW0 citations52
US12324175B2Jun 3, 2025
FET device and a method for forming a FET device
IMEC VZW0 citations52
US11610980B2Mar 21, 2023
Method for processing a FinFET device
IMEC VZW0 citations52
US12154832B2Nov 26, 2024
Method for forming a semiconductor device and a semiconductor device
IMEC VZW0 citations51
US10978335B2Apr 13, 2021
Method for producing a gate cut structure on an array of semiconductor fins
IMEC VZW0 citations51
US9478611B2Oct 25, 2016
Vertical nanowire semiconductor structures
IMEC VZW1 citations51
US12520556B2Jan 6, 2026
Method for forming a semiconductor device
IMEC VZW0 citations50
US12457785B2Oct 28, 2025
Method for forming a stacked FET device
IMEC VZW0 citations50
US12237371B2Feb 25, 2025
Method for forming a semiconductor device
IMEC VZW0 citations50
US12237207B2Feb 25, 2025
Method for forming a buried metal line in a semiconductor substrate
IMEC VZW0 citations50
US11430697B2Aug 30, 2022
Method of forming a mask layer
IMEC VZW0 citations50
US10303048B2May 28, 2019
Metal of ceramic material hardened pattern
IMEC VZW0 citations50
US10153341B2Dec 11, 2018
Method of forming internal spacer for nanowires
IMEC VZW1 citations50
US9437488B2Sep 6, 2016
Metallization method for semiconductor structures
IMEC VZW0 citations50
US11854803B2Dec 26, 2023
Gate spacer patterning
IMEC VZW0 citations49
US11682591B2Jun 20, 2023
Method for forming transistor structures
IMEC VZW0 citations49
US11348842B2May 31, 2022
Split replacement metal gate integration
IMEC VZW0 citations49
US10192956B2Jan 29, 2019
Method for producing fin structures of a semiconductor device in a substrate
IMEC VZW0 citations49
US12527079B2Jan 13, 2026
Method for forming a stacked FET device
IMEC VZW0 citations47
US12446247B2Oct 14, 2025
Circuit cell for a standard cell semiconductor device
IMEC VZW0 citations47
US11430876B2Aug 30, 2022
Method for producing self-aligned gate and source/drain via connections for contacting a FET transistor
IMEC VZW0 citations47
US10493378B2Dec 3, 2019
Method of forming micro-pipes on a substrate and a structure formed thereof
IMEC VZW0 citations47
US12519015B2Jan 6, 2026
Conductive via formation connecting transistor structures in an integrated circuit
IMEC VZW0 citations43
US12513878B2Dec 30, 2025
Bit cell with isolating wall
IMEC VZW0 citations43
US10128371B2Nov 13, 2018
Self-aligned nanostructures for semiconductor devices
IMEC VZW0 citations41
US10825682B2Nov 3, 2020
Method for producing a pillar structure in a semiconductor layer
IMEC VZW0 citations40
US10784158B2Sep 22, 2020
Area-selective deposition of a tantalum silicide TaSix mask material
IMEC VZW0 citations40
US10782607B2Sep 22, 2020
Reticles for lithography
IMEC VZW0 citations40
US9905455B2Feb 27, 2018
Method for forming contact vias
IMEC VZW0 citations38
US10790382B2Sep 29, 2020
Method for forming horizontal nanowires and devices manufactured thereof
IMEC VZW0 citations36
US9548208B2Jan 17, 2017
Method for patterning an underlying layer
IMEC VZW0 citations34